Zr-Cu-Al-Ti metallic glass film capable of controlling reflectivity
A zr-cu-al-ti, metallic glass technology, applied in metal material coating process, sputtering plating, ion implantation plating and other directions, can solve the problems of time-consuming, high cost, small change range, etc. To achieve the effect of wide application prospects
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Embodiment 1
[0024] 1) The target will be synthesized by using Zr, Cu, Al and Ti metal raw materials with a mass purity greater than 98%. The nominal ratio of Zr, Cu, Al, and Ti is 46.5at%, 45at%, 7at%, 1.5at%, and Put in the ultimate vacuum of 6.7×10 -8 On the target position of Pa's multi-target magnetron sputtering coating equipment, the substrate of the target sputtering film is a silicon single-sided polished wafer with a diameter of 25.4 mm, a thickness of 1 mm, and a root mean square roughness of 0.6 nm. The crystal plane direction of the silicon single-sided is (100); the polishing surface of the single-sided silicon polishing sheet is facing down, and the target is adjusted so that the distance from the target surface to the polishing sheet is 140 mm.
[0025] 2) Vacuum the sputtering chamber cavity of the multi-target magnetron sputtering coating equipment to a pressure of 5.0×10 in the cavity -7 Pa, adjust the substrate temperature to 25°C, then fill in high-purity argon with a volu...
Embodiment 2
[0031] 1) The target will be synthesized by using Zr, Cu, Al and Ti metal raw materials with a mass purity greater than 98%. The nominal ratio of Zr, Cu, Al, and Ti is 46.5at%, 45at%, 7at%, 1.5at%, and Put in the ultimate vacuum of 6.7×10 -8 On the target position of Pa's multi-target magnetron sputtering coating equipment, the substrate of the target sputtering film is a silicon single-sided polished wafer with a diameter of 25.4 mm, a thickness of 1 mm, and a root mean square roughness of 0.6 nm. The crystal plane direction of the silicon single-sided is (100); the polishing surface of the single-sided silicon polishing sheet is facing down, and the target is adjusted so that the distance from the target surface to the polishing sheet is 140 mm.
[0032] 2) Vacuum the sputtering chamber cavity of the multi-target magnetron sputtering coating equipment to a pressure of 5.0×10 in the cavity -7 Pa, adjust the substrate temperature to 100°C, then fill in high-purity argon with a vol...
Embodiment 3
[0038] 1) The target will be synthesized by using Zr, Cu, Al and Ti metal raw materials with a mass purity greater than 98%. The nominal ratio of Zr, Cu, Al, and Ti is 46.5at%, 45at%, 7at%, 1.5at%, and Put in the ultimate vacuum of 6.7×10 -8 On the target position of Pa's multi-target magnetron sputtering coating equipment, the substrate of the target sputtering film is a silicon single-sided polished wafer with a diameter of 25.4 mm, a thickness of 1 mm, and a root mean square roughness of 0.6 nm. The crystal plane direction of the silicon single-sided is (100); the silicon single-sided polished wafer is placed on the substrate holder with the polishing surface facing down, and the target is adjusted so that the distance between the target surface and the polished wafer is 140 mm.
[0039] 2) Vacuum the sputtering chamber cavity of the multi-target magnetron sputtering coating equipment to a pressure of 5.0×10 in the cavity -7 Pa, adjust the substrate temperature to 200 DEG C, th...
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