Storage device for data error correction using temperature difference equalization method
An equalization method and technology of a storage device, which are applied in the input/output process of data processing, electrical digital data processing, instruments, etc., can solve the problems of unreliable reading and writing of data and self-correction.
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[0030] figure 1 It is a schematic structural diagram of a storage device for data error correction using a temperature difference equalization method in an embodiment of the present invention.
[0031] Such as figure 1 As shown, the storage device 100 for data error correction using the temperature difference equalization method has a storage chip 10, a control chip 20, an interface 30 connected to an external data source, a PCB board 40, and a temperature sensor 50, wherein the control chip stores a control chip. program.
[0032] The memory chip 10 is a memory chip made of SLC, MLC, TLC or QLC flash memory particles.
[0033] In this embodiment, the storage chip is a NAND flash memory chip, specifically a NAND flash memory chip made of SLC, MLC, TLC or QLC flash memory particles. In theory, other types of memory chips, such as NOR flash memory, ROM, PROM, EPROM, EEPROM, Flash ROM, FRAM, MRAM, RRAM, PCRAM, etc., can also be used as the memory chip of the present invention....
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