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Storage device for data error correction using temperature difference equalization method

An equalization method and technology of a storage device, which are applied in the input/output process of data processing, electrical digital data processing, instruments, etc., can solve the problems of unreliable reading and writing of data and self-correction.

Active Publication Date: 2021-08-06
MEMORIGHT (WUHAN) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention is made to solve the defect that the prior art cannot achieve reliable reading and writing of data and cannot perform self-error correction under the above-mentioned wide temperature difference condition, and the purpose is to provide a storage device that uses a temperature difference equalization method to perform data error correction

Method used

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  • Storage device for data error correction using temperature difference equalization method
  • Storage device for data error correction using temperature difference equalization method

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Embodiment 1

[0030] figure 1 It is a schematic structural diagram of a storage device for data error correction using a temperature difference equalization method in an embodiment of the present invention.

[0031] Such as figure 1 As shown, the storage device 100 for data error correction using the temperature difference equalization method has a storage chip 10, a control chip 20, an interface 30 connected to an external data source, a PCB board 40, and a temperature sensor 50, wherein the control chip stores a control chip. program.

[0032] The memory chip 10 is a memory chip made of SLC, MLC, TLC or QLC flash memory particles.

[0033] In this embodiment, the storage chip is a NAND flash memory chip, specifically a NAND flash memory chip made of SLC, MLC, TLC or QLC flash memory particles. In theory, other types of memory chips, such as NOR flash memory, ROM, PROM, EPROM, EEPROM, Flash ROM, FRAM, MRAM, RRAM, PCRAM, etc., can also be used as the memory chip of the present invention....

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Abstract

The storage device that uses the temperature difference equalization method for data error correction has a storage chip, a control chip, and an interface connected to an external data source. The control program realizes: record the temperature T1 corresponding to the moment, and write it into storage as metadata, and obtain Write temperature T1 corresponding to each storage unit, and calculate the average temperature T when writing to the entire disk; after writing is completed, monitor the real-time ambient temperature T2 where the memory chip is located in real time; judge the ambient temperature T2 and the average temperature when writing Whether the difference between T exceeds the threshold t, if it exceeds, enter the next step; further judge whether the ambient temperature T2 reaches the set ideal writing temperature, and when it reaches, calculate the writing temperature of all storage units in a certain storage area The sum of the differences between T1 and the ambient temperature T2 is obtained to obtain the sum of the differences of all storage areas; sort by the size of the sum of the differences of the storage areas, and check and sum the data in all storage areas in order from large to small Error correction.

Description

technical field [0001] The invention relates to a data storage device and belongs to the field of data storage control. Background technique [0002] With the upgrading of flash memory, the data stored in flash memory is more and more sensitive to temperature changes. For example, the data written at high temperature will greatly increase the probability of reading errors at low temperature, and vice versa. [0003] However, more and more flash memory such as SSD solid state drive or storage array is used in industrial occasions, and the ambient temperature changes in these occasions are very wide: from -40°C to +85°C, such a large temperature difference environment Under the working environment, the data written in the flash memory will change with the change of the external environment temperature, that is, the digital state of 0 and 1 in the memory chip will change. When the change reaches a certain level, it will cause the stored data and files to change. damaged or los...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06
CPCG06F3/0614G06F3/0644G06F3/0679
Inventor 弗兰克·陈颜巍高兰娟
Owner MEMORIGHT (WUHAN) CO LTD
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