TeraHertz wave generator based on exchange bias magnetic field
A wave generator and bias magnetic field technology, applied in the field of terahertz optoelectronic devices, to achieve the effects of wide spectrum, simple structure and low cost
Inactive Publication Date: 2019-03-01
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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Problems solved by technology
At the same time, the invention solves the problem that the existing generator needs an external magnetic field generating device, making the terahertz wave generator more concise, convenient and more practical
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[0048] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0049] As mentioned in the background technology, the technology of terahertz wave generator based on ferromagnetic / nonmagnetic heterojunction thin film has appeared in recent years, using ultrafast spin current injection and inverse spin Hall effect of heterojunction, A production efficiency comparable to that of nonlinear crystals is obtained, but the frequency spectrum is wider and the cost is lower. However, when this generator is used, an external magneti...
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Abstract
The invention discloses a TeraHertz wave generator based on an exchange bias magnetic field. By use of the ultrafast spin current injection and reverse spin Hall effect of a ferromagnetic / non-magnetic film and / or a ferromagnetic / anti-ferromagnetic magnetic film in an exchange bias multilayer film, TeraHertz wave is generated. Meanwhile, the exchange bias magnetic field generated by the exchangebias effect of the ferromagnetic / anti-ferromagnetic magnetic film is used for fixing the magnetization intensity of a pinning ferromagnetic film; and in addition, through a rotary sample holder, theexchange bias multilayer film is rotated, so that the orientation of the magnetization intensity of a pinning ferromagnetic film rotates, and therefore, the polarization direction of the changed TeraHertz wave is changed. By use of the TeraHertz wave generator, the TeraHertz wave comparable with a nonlinear crystal can be generated, and in addition, a generated frequency spectrum is wide, has a simple structure and is low in cost. Meanwhile, by use of the exchange bias effect of the ferromagnetic / anti-ferromagnetic magnetic film, the orientation of the magnetization intensity is fixed, the problem of the addition of a magnetic field generation device is avoided, and therefore, the TeraHertz wave generator is simple, convenient and practical.
Description
technical field [0001] The present invention relates to the technical field of terahertz optoelectronic devices, and more specifically, relates to a terahertz wave generator based on an exchange bias magnetic field. Background technique [0002] Terahertz (THz) waves refer to electromagnetic waves with a frequency from 0.1THz to 10THz, between millimeter waves and infrared light. Terahertz waves have many unique properties, such as transmission, safety, strong spectral resolution, etc. These properties endow terahertz waves with a wide range of application prospects, including terahertz radar and communication, spectroscopy and imaging, non-destructive flaw detection, security detection etc. [0003] The terahertz wave generator is an important part of the terahertz system. Traditional terahertz generators based on femtosecond laser pumping mainly include electro-optic crystals, photoconductive antennas, air plasmas, etc., but they have certain bottlenecks in terms of freq...
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Login to View More IPC IPC(8): H01S1/02
CPCH01S1/02
Inventor 冯正谭为王大承
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS