System for interferometrically measuring the imaging quality of an anamorphic projection lens
An imaging system and measurement system technology, applied in measurement devices, measurement optics, optical radiation measurement, etc., to achieve high-precision measurement and promote reliable evaluation.
Active Publication Date: 2019-03-15
CARL ZEISS SMT GMBH
View PDF14 Cites 1 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
This deviation significantly exceeds the deviation that may be caused by manufacturing tolerances
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0046] figure 1 A measurement system according to an exemplary embodiment of the invention is schematically shown in the case of a schematically illustrated measurement of an anamorphic projection lens PO for EUV lithography. The projection lens PO is designed for an EUV microlithography projection exposure apparatus of the scanner type (not in further detail). During production operations, the EUV microlithography projection exposure apparatus is used to expose a radiation-sensitive substrate arranged in the region of the image plane IS of the projection lens PO using at least one image of a reflective mask (reticle) (e.g. semiconductor wafer), the pattern is arranged in the region of the object plane OS of the projection lens. To this end, the EUV microlithography projection exposure apparatus further comprises an illumination system arranged upstream of the projection lens, which illumination system receives and shapes the EUV radiation from the main EUV radiation source a...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| length | aaaaa | aaaaa |
Login to View More
Abstract
A measuring method and a measuring system for interferometrically measuring the imaging quality of an optical imaging system are configured, by adapted design of measurement structures of associated structure carriers, to carry out a wavefront measurement on an imaging system which has a first imaging scale beta1 in a first direction and a second imaging scale beta2 in a second direction, perpendicular to the first direction, said second imaging scale differing from the first imaging scale by a scale ratio (beta1 / beta2) is not equal to 1 (anamorphic imaging system). A first measurement structure (MS1) on a first structure carrier to be arranged on the object side of the imaging system has a two-dimensional mask structure suitable for shaping the coherence of measurement radiation. A second measurement structure (MS2) on a second structure carrier to be arranged on the image side of the imaging system has a diffraction grating. The first and second measurement structures are adapted toone another taking account of the scale ratio in such a way that an interference pattern arises upon an imaging of the first measurement structure (MS1) onto the second measurement structure (MS2) with the aid of the anamorphic imaging system.
Description
technical field [0001] The invention relates to a measurement method and a measurement system for interferometrically measuring the imaging quality of an optical imaging system. Background technique [0002] Optical imaging systems are used in many fields of technology and research, and the imaging quality requirements for the imaging systems are becoming more and more stringent. An example is the microlithographic production of semiconductor components and other finely structured components, in which structures in the submicron range can be produced by means of optical imaging systems in the form of projection lenses. Such imaging systems have complex optical configurations with many optical elements, which often make it impossible to derive actual optical properties from theoretical calculations. Therefore, the optical properties of imaging systems must be reliably measured. [0003] Interferometric methods are usually used for this purpose. WO 2001 / 063233 A1 (correspon...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): G01B9/02G01M11/00G01M11/02G03F7/20G01J9/02
CPCG01M11/0271G03F7/706G01J2009/0219G01J9/0215G01M11/0264
Inventor U.维格曼
Owner CARL ZEISS SMT GMBH