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A method for testing the electrical properties of metallized grid lines of crystalline silicon solar cells

A technology of a solar cell and a test method, applied in the field of solar cells, can solve the problems that the contact resistance and the line resistance cannot be measured at the same time, and the test value cannot be quantified, so as to achieve the effect of helping and improving the plasticity and electrical properties.

Active Publication Date: 2022-07-26
西安宏星电子浆料科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The invention provides a method for testing the electrical properties of metallized grid wires of crystalline silicon solar cells, which solves the problems in the prior art that the contact resistance and wire resistance cannot be measured simultaneously and the test values ​​cannot be quantified

Method used

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  • A method for testing the electrical properties of metallized grid lines of crystalline silicon solar cells

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Experimental program
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Embodiment 1

[0035] Step 1: texture the original single crystal silicon wafer: put the original single crystal silicon wafer into a solution of sodium hydroxide and additives with a volume ratio of 1:0.05 to corrode for 700s, pickle it and then dry it out; Wherein, the pickling solution is a mixed solution of hydrofluoric acid and hydrochloric acid.

[0036] Step 2: Divide the textured silicon wafers obtained in step 1 into two groups, wherein, group A is subjected to double-sided phosphorus diffusion, that is, the textured silicon wafers of group A are placed in a furnace where phosphorus oxychloride and oxygen are mixed The heating temperature in the tube is 750°C, the heating time is 800s, the doping square resistance is 70Ω / sq, and group B does not carry out any doping treatment;

[0037] Step 3: Both groups A and B are coated with silicon nitride film on both sides, that is, they are simultaneously placed in a chamber filled with plasma mixed with ammonia gas and silane to heat at 350...

Embodiment 2

[0042] Step 1: Texture the original single-crystal silicon wafer: put the original single-crystal silicon wafer into a solution of sodium hydroxide and additives with a volume ratio of 1:0.05 to corrode for 100,000s, pickle it and then dry it out; Wherein, the pickling solution is a mixed solution of hydrofluoric acid and hydrochloric acid.

[0043] Step 2: Divide the textured silicon wafers obtained in step 1 into two groups, wherein, group A is subjected to double-sided phosphorus diffusion, that is, the textured silicon wafers of group A are placed in a furnace where phosphorus oxychloride and oxygen are mixed The heating temperature in the tube is 800°C, the heating time is 1100s, the doping square resistance is 85Ω / sq , and group B does not carry out any doping treatment;

[0044] Step 3: Both groups A and B are coated with silicon nitride film on both sides, that is, they are simultaneously placed in a chamber filled with plasma mixed with ammonia gas and silane to heat ...

Embodiment 3

[0049]Step 1: texture the original single crystal silicon wafer: put the original single crystal silicon wafer into a solution of sodium hydroxide and additives with a volume ratio of 1:0.05 to corrode for 1350s, pickle it and then dry it out; Wherein, the solution of pickling is a mixed solution of hydrofluoric acid and hydrochloric acid.

[0050] Step 2: Divide the textured silicon wafers obtained in step 1 into two groups, wherein, group A is subjected to double-sided phosphorus diffusion, that is, the textured silicon wafers of group A are placed in a furnace where phosphorus oxychloride and oxygen are mixed The heating temperature in the tube is 800°C, the heating time is 1500s, the doping square resistance is 100Ω / sq, and group B does not carry out any doping treatment;

[0051] Step 3: Both groups A and B are coated with silicon nitride film on both sides, that is, they are simultaneously placed in a chamber filled with plasma mixed with ammonia gas and silane to heat a...

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Abstract

The invention discloses a method for testing the electrical properties of metallized grid lines of crystalline silicon solar cells. The specific technical solutions are as follows: 1) double-sided texture is performed on the surface of a P-type crystalline silicon cell; 2) 1) the textured silicon The wafers are divided into two groups, group A is doped with phosphorus on both sides, and group B is not doped; 3) Both groups A and B are treated with double-sided silicon nitride coating; 4) Groups A and B are respectively used for Measure the paste printing grid pattern, dry and sinter; 5) Test the resistance of the same grid line one by one with a resistance meter, and compare the A and B groups through the test data to obtain the relative value of the contact resistance and the optimal grid under the square resistance. Line width. The method disclosed in the present invention can more accurately compare the grid resistance of the paste at the battery application end and the contact resistance between the grid and the silicon wafer under the square resistance for the resistance test of the metal grid line, which can be used to check the abnormality of the production line process. , rapid development of slurry, optimization evaluation and matching of slurry and square resistance to provide simple and effective methods.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for testing the electrical properties of metallized grid lines of crystalline silicon solar cells. Background technique [0002] At present, the competition in the photovoltaic industry is fierce, and affordable access to the Internet requires the continuous reduction of production costs in all aspects. The metallization cost of the cell production end accounts for more than 30% of the non-silicon cost of the cell, and the proportion of high-efficiency cells is even higher. In solar cell technology, for the doping degree of the emitter, there is a contradiction between reducing carrier recombination and good ohmic contact. When the emitter is lightly doped, the recombination of minority carriers can be reduced and the solar cell can be improved. The spectral response in the short-wave region enhances the current collection and increases the short-circuit current dens...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L31/0224
CPCH01L31/022425H01L22/14H01L22/26H01L22/34Y02E10/50
Inventor 任军刚王大林赵科良寇航周孙永涛殷美刘丝颖张亚鹏李艳
Owner 西安宏星电子浆料科技股份有限公司