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Splicing method of nanometer pattern, nano-imprint plate, grating, and manufacturing methods

A technology of nano-pattern and manufacturing method, which is applied in the fields of nano-imprinting plate, nano-pattern splicing, grating and production, which can solve the problems of large step difference at the boundary, deformation, and the embossing glue at the boundary. High, high efficiency, low cost effect

Pending Publication Date: 2019-03-29
BOE TECH GRP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the present invention provides a nano-pattern splicing method, a nano-imprint plate, a grating and a manufacturing method, to solve the problem that the photoresist layer used for region definition is relatively large when forming large-scale nano-patterns by splicing methods. Thickness leads to a large step difference at the boundary, which in turn leads to problems such as glue loss and deformation of the imprinting glue at the boundary during the subsequent imprinting process

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  • Splicing method of nanometer pattern, nano-imprint plate, grating, and manufacturing methods
  • Splicing method of nanometer pattern, nano-imprint plate, grating, and manufacturing methods
  • Splicing method of nanometer pattern, nano-imprint plate, grating, and manufacturing methods

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Embodiment approach

[0053] Specifically, the photoresist in the photoresist reserved region 1042 on the first photoresist layer 104 can be thinned by a dry etching process, but pinhole defects may be formed in the photoresist during the thinning process. (Such as Figure 5 shown), the etching gas in the subsequent etching step may etch the lower first film layer 103 through the pinhole (such as Figure 9 shown). Therefore, as a preferred embodiment of the present invention, the etching step includes:

[0054] Using the embossed pattern as a mask, the first film layer 103 of the photoresist removal region 1041 is etched, and before the first nano-pattern 10321 is formed, a second nano-pattern 10321 is formed on the substrate 101. photoresist layer 106;

[0055] Using a photolithography process, the second photoresist layer 106 is patterned to form the photoresist removal area 1041 corresponding to the area to be patterned on the base substrate 101 and the corresponding area on the base substrat...

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Abstract

The invention provides a splicing method of a nanometer pattern, a nano-imprint plate, a grating, and manufacturing methods, which belong to the technical field of display. The splicing method of thenanometer pattern includes the following steps: forming a first photoresist layer on a substrate base plate equipped with a first film layer, performing composition on the first photoresist layer, andforming a photoresist removal region corresponding to a to-be-patterned area on the substrate base plate and a photoresist retention region corresponding to other regions on the substrate base plate;thinning photoresist in the photoresist retention region on the first photoresist layer; forming an imprint adhesive layer having an imprint pattern on the substrate base plate, and covering the photoresist removal region and the partial photoresist retention region adjacent to the photoresist removal region with the imprint adhesive layer; and utilizing the imprint pattern as a mask, and performing etching on the first film layer of the photoresist removal region to form a first nanopattern; and repeating the above steps to form a spliced first nanopattern. Through thinning the photoresist on the first photoresist layer, the splicing method of the nanometer pattern enables a segment gap at the boundary of the to-be-patterned area to be reduced.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a nano-pattern splicing method, a nano-imprinted plate, a grating and a manufacturing method. Background technique [0002] In recent years, nanoimprint technology has developed rapidly as a micro-nano processing technology. This technology has achieved ultra-high resolution through mechanical transfer. important means of processing. [0003] At present, when making large-size imprinting masters, the area to be patterned can be defined by photolithography to realize the splicing of large-size nano-patterns. A water-soluble material is required in the process of making nano-patterns. A nano pattern is formed on the material, and then an embossing glue coating is carried out on the material to form an embossing glue layer having a pattern complementary to the nano pattern, and finally the embossing glue layer 105 is transferred to the embossing layer through a photolithography pr...

Claims

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Application Information

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IPC IPC(8): G03F7/00G02B5/18
CPCG02B5/1847G03F7/0002
Inventor 贺芳尹东升顾仁权何伟徐胜吴慧利李士佩黎午升姚琪
Owner BOE TECH GRP CO LTD