A kind of semiconductor device and its manufacturing method
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, instruments, electrical components, etc., can solve problems such as total range range and range shift, affecting sensitivity, and output signal beyond the controllable range.
Active Publication Date: 2022-03-01
SHANGHAI IND U TECH RES INST
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Problems solved by technology
When these micro-mechanical structures are affected by uncontrollable residual stress, they will not be able to operate normally in the original default linear section, which will affect the sensitivity of the original product design, and will cause the total range and range offset, and then Make the output signal beyond the controllable range of IC design
Method used
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Embodiment 1
[0038] Embodiment 1 of the present application provides a method for manufacturing a semiconductor device. figure 1 is a schematic flow chart of the manufacturing method of the semiconductor device, Figure 2-Figure 8 It is a schematic diagram of the device structure corresponding to each step of the manufacturing method of the semiconductor device.
[0039] Below, combine figure 1 and Figure 2-Figure 8 , the method of manufacturing the semiconductor device of the present embodiment will be described.
[0040] Such as figure 1 As shown, the method may include step 101-step 105.
[0041] Step 101, forming a sensor structure 111 and / or circuit 112 on the front surface 11 of the first substrate 1, such as figure 2 and image 3 shown.
[0042] In this embodiment, the first substrate may be a material used in the semiconductor manufacturing field, such as a silicon wafer, a silicon-on-insulator (Silicon-On-Insulator, SOI) wafer, a silicon-germanium wafer, a germanium wafer...
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The present application provides a semiconductor device and a method for manufacturing the same. The manufacturing method includes: forming a sensor structure and / or circuit on the front surface of a first substrate; forming a first recess on the front surface of a second substrate; the first The front surface of the substrate is combined with the front surface of the second substrate, wherein the first substrate and the first concave part enclose a cavity, and the sensor structure and / or the circuit are located in the in the lateral area of the cavity; thinning the first substrate from the back of the first substrate, the thinned first substrate becomes a transfer film; and etching the transfer film to A through portion is formed in the transfer film, which penetrates through the transfer film and communicates with the cavity, and the through portion is located around the sensor structure and / or the circuit. According to the present application, the stress in the semiconductor device can be sufficiently relieved.
Description
technical field [0001] The present application relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Microsensors made by semiconductor technology need to go through multiple heating and cooling cycles. For example, when depositing different thin film materials, the silicon dioxide deposited by the furnace tube is about 600 to 800 degrees Celsius. After the deposition step is completed , then return to room temperature, and then withdraw the substrate silicon wafer from the furnace tube, repair the substrate defect in the annealing process or temper after the injection process to make the injection distribution uniform, etc., may reach a high temperature of 1100 degrees Celsius , and then return to normal temperature to take out the substrate; in addition, in the semiconductor process, there are soft-baking and hard-baking photoresists in the photolithography process, etchin...
Claims
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IPC IPC(8): H01L21/18G01L9/00
CPCH01L21/187G01L9/0042
Inventor 梁凯智
Owner SHANGHAI IND U TECH RES INST