Semiconductor device manufacturing method and semiconductor device evaluation method
A technology of manufacturing method and evaluation method, which is applied in semiconductor/solid-state device manufacturing, semiconductor device, semiconductor/solid-state device testing/measurement, etc., can solve problems such as the generation and control of unmentioned defects, and affect the mobility of equipment, and achieve The effect of preventing defects
Active Publication Date: 2019-04-02
SHIN-ETSU HANDOTAI CO LTD
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Problems solved by technology
However, the reason for focusing on the plane orientation is always related to the mobility that affects the performance of the device, and the generation and control of defects caused by ion implantation and other processes are not mentioned.
Method used
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Embodiment
[0048] Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited to these.
[0049] (Example)
[0050] A boron-doped silicon substrate with a diameter of 200 mm and a resistivity of 10 Ω"cm having a plane orientation of a main surface of (100) was prepared. First, a resist was coated on this silicon substrate, and photolithography was performed. The position of the groove at this time is the (110) direction, and L&S (a pattern in which lines and spaces of the Fin structure alternately exist) is directly formed in the (110) direction. A negative resist was selected for photolithography, and a pattern with an L&S of 1.2 μm was formed on the surface of the silicon substrate. This resist-attached wafer was etched by dry etching, and the resist was removed with a sulfuric acid hydrogen peroxide mixed solution, followed by RCA cleaning. The dry etching conditions at this time are set as, ...
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The invention provides a semiconductor device manufacturing method characterized by comprising forming a fin structure portion on a semiconductor silicon substrate, performing ion injection into the fin structure portion, and then performing recovery heat processing on the semiconductor silicon substrate to re-crystalize silicon in the fin structure portion. The semiconductor device manufacturingmethod is characterized in that the fin structure portion is processed in such a way that an end face of the {111} plane of the semiconductor silicon does not appear on a side wall of the fin structure portion that is formed. In this way, the semiconductor device manufacturing method prevents introduction of defects into the fin structure portion when the fin structure portion is subjected to ioninjection and the recovery heat processing is performed.
Description
technical field [0001] The present invention relates to a manufacturing method and an evaluation method of a semiconductor device, in particular to a manufacturing method of a semiconductor device having a Fin structure, and an evaluation method of a semiconductor device manufactured by the semiconductor device manufacturing method. Background technique [0002] Ion implantation technology is a very important method in the manufacture of semiconductor components represented by various transistors. However, since this is a method of ionizing an implanted element serving as a dopant to accelerate and implant it into silicon, silicon may be damaged by the accelerated ions. In order to avoid this damage, various methods have been studied, but basically, in order to reconstruct the bond of damaged silicon (for example, amorphized silicon) and make it single crystal, heat treatment at a sufficient high temperature is used to restore it. Methods. [0003] In the conventional plan...
Claims
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IPC IPC(8): H01L21/265H01L21/66H01L29/78H01L21/20H01L21/336
CPCH01L29/045H01L29/66795H01L21/26586H01L22/12Y02P70/50H01L21/265H01L21/324H01L29/785H01L21/02381H01L21/2003H01L29/78
Inventor 大槻刚中杉直竹野博铃木克佳
Owner SHIN-ETSU HANDOTAI CO LTD