Monitoring method of sti morphology of semiconductor device, its application method and method of improving tcr structure

Abstract

The invention relates to a method for monitoring the etching morphology of shallow trench isolation of semiconductor devices, and relates to the field of microelectronics technology, including S1: using an optical line width measuring instrument to collect the STI structures of semiconductor devices with different etching times Actual measurement spectrum; S2: Modeling and defining the theoretical model structure of TCR structure; S3: Slicing to determine the actual data of TCR structure; S4: According to the actual measurement spectrum collected in step S1 and the theoretical model structure in step S2, through further analysis and calculation, get The measurement program library file of the TCR structure; S5: use the measurement program library file to collect the theoretical data of the parameters of the TCR structure that need to be monitored, and establish the corresponding relationship between the theoretical data and the actual data collected in step S3, and confirm the relationship between the two Correlation coefficient R 2 ; S6: Using the correlation coefficient R 2 and the measurement program library file obtained in step S4 to obtain the parameters of the TCR structure, so as to realize the effective monitoring of the appearance of the TCR structure and achieve the purpose of stabilizing the process of the shallow trench TCR structure.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a method for monitoring the STI shape of a semiconductor device, an application method thereof and a method for improving a TCR structure. Background technique [0002] In the field of microelectronics technology, the saturation current of a semiconductor device is an important parameter of the semiconductor device, and it is generally desired that the saturation current of the semiconductor device be as large as possible. [0003] However, in the manufacturing process of semiconductor devices, due to various process errors, improper detection and monitoring equipment and monitoring methods, various characteristic parameters in the manufacturing process of semiconductor devices cannot be accurately monitored, and thus cannot be effectively improved, resulting in semiconductor The device cannot meet the demand, such as the leakage current of the semiconductor device is re...

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Problems solved by technology

[0003] However, in the manufacturing process of semiconductor devices, due to various process errors, improper detection and monitoring equipment and monitoring methods, various characteristic parameters in the manufacturing process of semiconductor devices cannot be accurately monitored, and thus cannot be effectively improved, resulting in semiconductor The device cannot meet the demand, such as the leakage current of the semiconductor device is large

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