Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for realizing GaN original substrate transfer by adopting double diamond layers and application

A diamond layer and substrate transfer technology, which is applied in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve the problems of difficulty and cannot withstand the growth environment of CVD diamond film, and achieves reduction of introduction, improvement of quality and efficiency. Efficiency, the effect of alleviating deformation

Active Publication Date: 2019-04-16
UNIV OF SCI & TECH BEIJING
View PDF7 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technology has high requirements on the surface state and bonding equipment, and it is very difficult to achieve high-quality bonding
In addition, if in the subsequent diamond transfer process, if the technical route of growing CVD diamond film is adopted (this route achieves better thermal conductivity of the diamond film), most bonding processes will not be able to withstand the CVD diamond film growth environment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for realizing GaN original substrate transfer by adopting double diamond layers and application
  • Method for realizing GaN original substrate transfer by adopting double diamond layers and application
  • Method for realizing GaN original substrate transfer by adopting double diamond layers and application

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0044] The present invention also provides a method for preparing a diamond-based GaN semiconductor material, comprising the following steps:

[0045] 1. Deposit a GaN layer on the original substrate, the original substrate is Si-based, sapphire-based or SiC-based;

[0046] 2. Using the GaN original substrate transfer method according to any of the above aspects to perform substrate transfer to form a diamond-based GaN semiconductor material.

[0047] The present invention also provides a diamond-based GaN semiconductor material, which is obtained by the method for preparing a diamond-based GaN semiconductor material according to any one of the above aspects.

Embodiment

[0049] 1. Select a 10×10mm Si-based GaN wafer, and the thickness of the Si substrate is 0.5mm. Ultrasonic cleaning with acetone, alcohol and deionized water in sequence, and air drying with a hair dryer;

[0050] 2. Place the substrate in the magnetron sputtering coating system and vacuumize to 5×10 -4 Vacuum below Pa. Under the Ar sputtering atmosphere, a pure Ti transition layer was sputtered on the GaN surface with Ti material as the target. Sputtering power 400W, sputtering chamber pressure 3.0×10 -1 Pa, self-bias voltage 700V, sputtering time 3h, Ti transition layer thickness after sputtering is 2μm;

[0051] 3. Take out the above sample, place it in a microwave plasma chemical vapor deposition system, evacuate it to below 0.1Pa, turn on the microwave plasma CVD system, and plate a CVD diamond film on the surface of the Ti transition layer. Microwave power 3kw, substrate temperature 700°C, methane concentration 3%, deposition time 40h, diamond film thickness 200 micro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for realizing GaN original substrate transfer by adopting double diamond layers and an application. The method includes the following steps: selecting a GaN wafer, wherein the GaN wafer is provided with an original substrate; growing a first transition layer on the surface of a growth surface of the GaN wafer; depositing a first CVD diamond film on the surface of the first transition layer to serve as a temporary carrier; removing the GaN original substrate by adopting a chemical etching or laser stripping technology to expose a nucleation surface of GaN; growing a second transition layer on the surface of the nucleation surface of the GaN wafer to serve as a dielectric layer; depositing a second CVD diamond film on the surface of the second transition layer to serve as a heat conducting substrate of GaN; and selectively etching the first transition layer, and retaining the second transition layer. According to the scheme of the invention, the introduction of the Si wafer bonding process is reduced; and meanwhile, because the front surface and the back surface are both diamond films, the problem of cracking caused by the deformation of the GaN filmcan be effectively relieved, and the quality and efficiency of replacing the GaN original substrate with the diamond films can be effectively improved.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular provides a substrate transfer method for realizing a diamond-based GaN semiconductor structure, and more specifically, provides a method and application for realizing GaN original substrate transfer by using double diamond layers. Background technique [0002] Gallium nitride is the most promising semiconductor material in recent years. With the development of microwave power devices based on gallium nitride (GaN) materials in the direction of smaller size, higher output power and higher frequency, the problem of "heat" has become more and more prominent, which has gradually become a constraint to the development of such devices. One of the bottlenecks of performance improvement. The thermal conductivity of diamond film can reach 2000W / (m·k) (the thermal conductivity of silver and copper at room temperature are 420W / (m·k) and 395 W / (m·k) respectively), which is a very...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01L29/20
CPCH01L21/6835H01L29/2003H01L2221/68345H01L2221/68386
Inventor 魏俊俊贾鑫李成明陈良贤刘金龙张建军高旭辉
Owner UNIV OF SCI & TECH BEIJING