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Bidirectional protection chip and preparation method thereof

A chip and horizontal technology, which is applied in the field of bidirectional protection chip and its preparation, can solve the problems of increasing chip volume and large circuit volume, and achieve the effects of bidirectional voltage protection, volume reduction and simple structure

Active Publication Date: 2019-04-16
SHANGHAI YB ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, it is difficult for ordinary protection chips to achieve bidirectional voltage protection. Even if multiple protection chips can be connected in series and parallel to achieve bidirectional protection, it will increase the size of the chip and make the circuit larger.

Method used

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  • Bidirectional protection chip and preparation method thereof
  • Bidirectional protection chip and preparation method thereof
  • Bidirectional protection chip and preparation method thereof

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Embodiment Construction

[0043] In order to understand the specific technical solutions, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0044] In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "transverse", "longitudinal", "horizontal", "inner", "outer" etc. indicate The orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship that is usually placed when the product of the invention is used, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying the It should not be construed as limiting the invention that a device or element must have a particular orientation, be constructed, and operate in a particular ...

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PUM

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Abstract

The invention discloses a bidirectional protection chip. The bidirectional protection chip comprises a substrate of a first conductive type, a first epitaxial layer of a first conductive type formed on the upper surface of the substrate, a first injection region of a first conductive type formed downward from the upper surface of the first epitaxial layer, at least one second epitaxial layer of afirst conductive type formed at the junction of the first epitaxial layer and the upper surface of the first injection region, a third epitaxial layer of the second conductive type formed on the uppersurface of the second epitaxial layer, a fourth epitaxial layer of the second conductive type formed on the upper surface of the first injection region and is spaced from the second epitaxial layer,and an insulating layer is formed on the upper surfaces of the first epitaxial layer, the third epitaxial layer, the fourth epitaxial layer and the first injection region, wherein the ion concentration of the first injection region is greater than that of the first epitaxial layer. The invention also discloses a preparation method of the bidirectional protection chip. Bidirectional voltage protection can be achieved, and the size is small.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a bidirectional protection chip and a preparation method thereof. Background technique [0002] The power device protection chip is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, small leakage current and reliable High performance, so it has been widely used in voltage transient and surge protection. [0003] However, it is difficult for ordinary protection chips to realize bi-directional voltage protection. Even if multiple protection chips can be connected in series and parallel to realize bi-directional protection, the volume of the chip is increased and the volume of the circuit is larger. Contents of the invention [0004] In order to overcome the deficiencies of the prior art, one of the objectives of the present inve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L21/82
CPCH01L21/82H01L27/0255
Inventor 不公告发明人
Owner SHANGHAI YB ELECTRONICS CO LTD