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Semiconductor device

A semiconductor and voltage technology, applied in output power conversion devices, DC power input conversion to DC power output, pulse technology, etc., can solve the problem of limited chip miniaturization

Active Publication Date: 2021-01-01
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the short-circuit energy becomes large, there will be problems such as restrictions on the miniaturization of the chip

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
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Effect test

no. 1 Embodiment approach

[0025] First, refer to Figure 1 to Figure 5 , the schematic configuration of the semiconductor device of the present embodiment will be described. In addition, in the drawings, SC represents the semiconductor device 100 , OC represents the output current detection unit 130 , VD represents the voltage detection unit 140 , CN represents the control unit 150 , and M represents the motor 200 .

[0026] The semiconductor device 100 such as figure 1 As shown, for example, a voltage converter (converter) circuit 400 for supplying electric power to an inverter circuit 300 in a power conversion device that drives a motor 200 mounted on a vehicle.

[0027] The power conversion device boosts the output voltage of battery 500 , converts the DC power into AC power of a frequency suitable for running, and outputs it to motor 200 . That is, the power conversion device includes a voltage converter circuit 400 and an inverter circuit 300 . Furthermore, capacitors 600 and 610 for current sm...

Deformed example 1

[0063] In the first embodiment, if Figure 7 As shown, an example is shown in which the gate voltage Vg to be clamped is determined based on V1 to V6 which equally divides the output voltage Vds. Here, the output voltage Vds may not be equally divided, or may be as Figure 8 As shown, the higher the output voltage Vds is, the more subdivided the voltages V7 to V12 are determined. That is, the output voltage Vds is distributed so that V9-V8 becomes smaller than V8-V7, and similarly, V12-V11 becomes even smaller.

[0064] And, the gate voltage to be clamped is determined as follows. That is, the control unit 150 sets Vref(=Vg)=14V when V7≦Vds

[0065] Thus, in the range of...

no. 2 Embodiment approach

[0068] In the first embodiment and its modifications, an example in which the clamp voltage is determined based only on the output voltage Vds has been described. On the other hand, information on the temperature of the power switching element 410 and information on the load of the motor 200 are input to the control unit 150 in the semiconductor device 100 of the present embodiment.

[0069] The control unit 150 determines a reference voltage Vref (=clamp voltage) based on the temperature of the power switching element 410 and the load condition of the motor 200 in addition to the output voltage Vds detected by the voltage detection unit 140 .

[0070] For example, the lower the element temperature of the power switching element 410 is, the lower the control unit 150 sets the reference voltage Vref. This is because, even with the same output voltage Vds, the lower the element temperature, the greater the output current.

[0071] In addition, the control unit 150 sets the refe...

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PUM

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Abstract

The semiconductor device controls ON / OFF of a power switching element (410) through which an output current flows between output terminals by applying a gate voltage to the gate terminal. The device includes an output current detection unit (130) for detecting a current value related to an output current, a voltage detection unit (140) for detecting a voltage related to a voltage between output terminals of a power switching element, and clamping a gate voltage to a predetermined value. A value clamping circuit (120), and a control unit for controlling the clamping circuit based on the detection voltage detected by the voltage detection unit to adjust the gate voltage. The control unit controls the clamp circuit corresponding to the detection voltage so that the output current flowing when the power switching element is short-circuited exceeds a threshold current for detecting the short-circuit of the power switching element and becomes a gate voltage set to a minimum voltage.

Description

[0001] Cross-reference of related applications [0002] This application is based on Japanese Patent Application No. 2016-165879 filed on August 26, 2016, the contents of which are cited here. technical field [0003] The present invention relates to a semiconductor device that drives a power switching element. Background technique [0004] In the turn-on operation of the power switching element, there is a stage for judging the short circuit of the power switching element. Conventionally, in such a short-circuit determination stage, as described in Patent Document 1, the output current is limited by clamping the gate voltage applied to the power switching element to a predetermined value. Thereby, compared with the case where the gate voltage is not clamped, the energy consumption at the time of short circuit can be reduced. [0005] prior art literature [0006] patent documents [0007] Patent Document 1: Japanese Patent Laid-Open No. 2012-249481 Contents of the inv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/08
CPCH02M1/08H02M3/158H02M7/53875H02M1/32H03K2217/0081H02M1/0009H02M1/007H02M7/537H03K17/166
Inventor 加藤良隆小宫健治进藤祐辅林庆德若林健一
Owner DENSO CORP