a graphite base

Abstract

The invention discloses a graphite base, which belongs to the field of epitaxial growth equipment. The substrate placed in the circular groove is mainly in close contact with the side wall part where the symmetry plane of the second part is located, so n arc-shaped grooves are opened on the side wall of the second part, and when n is an even number, The angle between the line of symmetry of at least one of the n arc-shaped grooves and the plane of symmetry of the second part is less than 90°; when n is an odd number, the arc-shaped surface of one of the arc-shaped grooves and the second part The symmetry planes intersect, and this arrangement can ensure that the position of the arc-shaped groove is set at the part where the substrate is in close contact with the side wall of the second part. Further, the central angle corresponding to the arc is less than 150°, and the substrate will not be in contact with the arc-shaped surface of the arc-shaped groove, which reduces the contact between the substrate, the epitaxial layer on the substrate, and the side wall of the second part area, thereby making the overall temperature on the substrate and the epitaxial layer relatively uniform, thereby improving the luminous uniformity of the final epitaxial wafer.

Description

Technical field[0001]The present invention relates to the field of epitaxial growth devices, and more particularly to a graphite base.Background technique[0002]The graphite base is part of the metal organic compound chemical vapor deposition (English: MOCVD) equipment, the graphite base is a cylinder, and a plurality of circular grooves are provided on the end face of one end of the graphite base. The unit and the plurality of set of circular groove units are radially distributed along the end surface of one end of the graphite base. Each set of circular groove units each includes a plurality of circular grooves, and the plurality of circular grooves are connected along the circumferential direction of the end surface of one end of the graphite base, and the other end of the graphite base is connected to the drive structure of the MOCVD device.[0003]When the epitaxial sheet is prepared, it is necessary to place the substrate within a circular groove, and the drive structure controls...

AI Technical Summary

Problems solved by technology

Since the MOCVD equipment transfers heat to the substrate through the contact between the substrate and the circular groove, the temperature of the part where the epitaxial layer is in close contact with the sidewall of the circular groove will be higher, while the temperature of the epitaxial layer will be higher. The temperature of other parts is relatively low, and the difference in temperature in different parts of the epitaxial layer will lead to poor luminescence uniformity of the final epitaxial wafer.

Images