Structure and fabricating method of distributed feedback laser

Abstract

A structure and fabricating method of distributed feedback (DFB) laser are provided. A phase-shift grating structure and a gratingless area are disposed in the grating layer of the DFB laser, and bothside-surfaces of the DFB laser are coated with anti-reflection coating to improve SMSR and to obtain good slope efficiency. The grating layer is divided by the phase-shift grating structure in a horizontal direction into a first grating area and a second grating area adjacent to a laser-out surface of the DFB laser. The phase-shift grating structure may provide a phase-difference distance, such that a shift of phase exists between the micro-grating structures located within the first grating area and the micro-grating structures located within the second grating area. The gratingless area located within the second grating area contains no micro-grating structure, and moreover, the gratingless area will not change the phase of the micro-grating structures located within the second gratingarea.

Description

technical field [0001] The invention relates to a distributed feedback laser structure and manufacturing method, especially to a distributed feedback laser grating layer which includes a phase difference grating structure and a grating-free area, and is coated on both sides of the distributed feedback laser The structure and manufacturing method of the anti-reflection layer. Background technique [0002] Semiconductor laser (semiconductor laser) or laser diode (laser diode) has the advantages of small size, low power consumption, fast response, impact resistance, long life, high efficiency and low price, so it is widely used in optoelectronic system products, For example: light wave communication, information system, household appliances, precision measurement and optical fiber communication, etc. Among them, the Distributed Feedback Laser (DFB laser) has the characteristics of simple manufacture, single-mode output and suitable for long-distance transmission. The laser sig...

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Problems solved by technology

However, this method still has disadvantages. If the spectrum of HR and AR is not well controlled, it is easy to have FP mode at low temperature to achieve lasing.

In addition, with the existing grain strip (Bar) splitting method, it is impossible to control the position where the splitting plane is broken on the grating, so there will be a so-called random phase (Random Phase) problem at the end of the HR mirror 192, which will Discretize the threshold current (Ith) and SE distribution of grain-to-chip (Chip to Chip) or grain-to-grain (Bar to Bar), and there will be two laser modes in some phases (Lasing Mode) is as strong, so the pass rate of SMSR is reduced, so further improvement is needed

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