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Preparation method of nanometer material

A technology of nanomaterials and substrate materials, applied in nanotechnology, nanotechnology, metal material coating process, etc., can solve the problem of weak adhesion between carbon nanotubes and substrates, and achieve the effect of improving adhesion

Inactive Publication Date: 2019-04-26
GUIZHOU BRANCH CHINA ALUMINUM IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the technical problem that the carbon nanotubes grown by the chemical vapor deposition method and the substrate are not strongly bonded, the present invention is realized by adopting the following technical solutions

Method used

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  • Preparation method of nanometer material
  • Preparation method of nanometer material

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Experimental program
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Effect test

Embodiment 1

[0028] Use electrochemical methods to corrode pits with a vertical depth of about 2μm-10μm on the surface of the aluminum foil base material. In the chemical vapor deposition reaction furnace, argon gas is introduced as a protective gas, the temperature of the base material is raised to 625°C, and the temperature is kept, and hydrogen gas, an ethanol solution in which the catalyst ferrocene is dissolved, and ethylene gas are introduced into the chemical vapor deposition reaction furnace. Start to grow carbon nanotubes on the surface of the aluminum foil substrate. The reaction time is 1h. At the interface between the prepared carbon nanotubes and the aluminum foil substrate, the roots of the carbon nanotubes are entangled into small coils and buried in the pits on the surface of the aluminum foil substrate. , thereby greatly improving the bonding force between carbon nanotubes and aluminum foil substrates.

Embodiment 2

[0030] Laser etching is used to etch a circular pit with a vertical depth of 30 μm-50 μm on the surface of silicon oxide ceramics. The pit is a circular cavity with an inner diameter larger than the diameter of the pit surface, and the length of the pit surface diameter is 15 μm. Evaporate a layer of Fe catalyst layer with a thickness of about 30nm on the surface of the silicon oxide material with the pit surface, then put the silicon oxide substrate loaded with the catalyst film layer into a chemical vapor deposition reaction furnace, and pass in argon as a protective gas, Raise the temperature of the substrate material to 950°C, keep it warm, and feed hydrogen and ethylene gas into the chemical vapor deposition reaction furnace to start growing carbon nanotubes on the surface of the silicon oxide substrate. The reaction time is 1h. The prepared carbon nanotubes and silicon oxide substrate At the contact interface, the roots of the carbon nanotubes are wound into small coils a...

Embodiment 3

[0032]Use chemical methods to corrode pits with a vertical depth of about 2μm-20μm on the surface of the iron-nickel-based stainless steel base material. Put it into the chemical vapor deposition reaction furnace, pass in argon as a protective gas, raise the temperature of the base material to 800°C, keep it warm, and pass hydrogen gas, ethanol solution with iron-based catalyst dissolved, and acetylene gas into the chemical vapor deposition reaction furnace , began to grow carbon nanotubes on the surface of the stainless steel substrate, and the reaction time was 1h. At the interface between the prepared carbon nanotubes and the iron-nickel stainless steel substrate, the roots of the carbon nanotubes were entangled into small coils, and buried in the surface of the stainless steel substrate. pits, thereby greatly improving the bonding force between carbon nanotubes and stainless steel substrates.

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Abstract

The invention discloses a preparation method of nanometer material. The method is characterized in that a material is treated as a base material; uniform or non-uniform microcosmic pot hole structuresare formed on the surface of the base material; carbon nano tubes are generated on the surface of the base material; and root parts of the carbon nano tubes in contact with a base are buried into potholes in the surface of the base material. According to the method, the microcosmic multi-pot-hole structural base is adopted; the root parts of the generated carbon nano tubes are buried into the pot holes in the surface of the base material; compared with a condition that carbon nano tubes which are generated on a smooth surface of the base material are easily automatically separated or scrapped off, the root parts of the carbon nano tubes in the method are firmly fixed through the porous pot hole structure, so that the carbon nano tubes are hardly separated or scrapped off from the surfaceof the base material; and the combination force between the carbon nano tubes and the base material can be greatly increased.

Description

technical field [0001] The invention belongs to the field of nanometer materials, and in particular relates to a preparation method of nanometer materials to improve the binding force between carbon nanotubes and substrates. Background technique [0002] Carbon nanotube materials have attracted much attention since their discovery. As a typical one-dimensional material, carbon nanotubes have excellent properties in chemistry, physics, electronics and mechanics. For example, carbon nanotubes have excellent electrical and thermal conductivity. Performance, extremely high mechanical strength, strong broadband electromagnetic wave absorption characteristics, etc., make carbon nanotubes widely researched and applied in the fields of physics, chemistry and material science. At present, carbon nanotubes are widely used as supercapacitor electrode materials, reinforcement materials, gas adsorption materials, catalytic materials, field electron emission materials, thermal conductivit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/02C23C16/26C23C14/02C23C14/06B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C23C14/021C23C14/028C23C14/0605C23C16/0227C23C16/0254C23C16/26
Inventor 杜娟康乐罗英涛陈开斌
Owner GUIZHOU BRANCH CHINA ALUMINUM IND