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Method for cleaning wafer

A wafer and pre-cleaning technology, applied in the direction of cleaning methods using liquids, cleaning methods and utensils, chemical instruments and methods, etc., can solve problems such as ineffective removal of defects, achieve the effect of reducing defects, ensuring performance and yield

Pending Publication Date: 2019-05-03
SAE TECH DELEVOPMENT DONGGUAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the actual operation process, it is found that the existing cleaning method cannot effectively remove the defects after the tungsten CMP process

Method used

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Examples

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Embodiment Construction

[0021] The wafer cleaning method of the present invention will be further described below in conjunction with the embodiments, but the present invention is not limited thereby.

[0022] An embodiment of the cleaning method of wafer of the present invention comprises the following steps in sequence:

[0023] The wafer is placed in an acidic mixed solution for degumming;

[0024] The wafer is cleaned in a mixed acid solution of nitric acid and hydrofluoric acid;

[0025] The wafer is soaked in a weak base solvent; and

[0026] The wafer was rinsed with pure water.

[0027] The wafer cleaning method of the present invention sequentially performs acid degumming, acid cleaning of metal oxides, alkaline soaking to remove residues, and pure water cleaning, which can efficiently remove residues on the wafer and reduce defects on the wafer, thereby ensuring semiconductor Device performance and yield.

[0028] In another embodiment, the cleaning method of the wafer comprises the fol...

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PUM

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Abstract

A method for cleaning a wafer of the present invention comprises: degumming a wafer in an acidic mixed solution; cleaning the wafer in a mixed acid solution of nitric acid and hydrofluoric acid; immersing the wafer in a weak alkali solvent; and rinsing the wafer with pure water. The method can efficiently remove residues on the wafer and reduce defects of the wafer, thereby ensuring the performance and yield of semiconductor devices.

Description

technical field [0001] The invention relates to the field of semiconductor chip cleaning, in particular to a wafer cleaning method. Background technique [0002] As the feature size of integrated circuits enters the deep sub-micron stage, the cleanliness of wafers required in the integrated circuit chip manufacturing process is getting higher and higher. In order to ensure the cleanliness of the chip material surface, there are hundreds of road cleaning process. [0003] In the existing semiconductor manufacturing process, metal tungsten (W) needs to be filled into the contact hole (CT) and then planarized. The existing cleaning method generally uses ammonia water (NH 4 OH) to clean the wafer, and then use hydrofluoric acid (HF) to clean the wafer. [0004] However, in the actual operation process, it is found that the existing cleaning method cannot effectively remove the defects after the tungsten CMP process. The number of defects on the wafer after the tungsten CMP p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02B08B3/12
Inventor 魏顺锋
Owner SAE TECH DELEVOPMENT DONGGUAN