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Blue-light-sensitized silicon-based avalanche photodiode array device

A diode array, avalanche photoelectric technology, applied in electrical components, semiconductor devices, circuits, etc., can solve problems such as low blue light sensitivity, achieve uniform electric field distribution, reduce junction capacitance, and improve quantum efficiency.

Active Publication Date: 2022-02-01
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the present invention solves the problem of low blue light sensitivity of APD due to surface recombination effect in the prior art, better increases the absorption of blue light by APD, improves the cut-off frequency and gain of APD, and provides a blue light sensitization Silicon Avalanche Photodiode Array Device

Method used

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  • Blue-light-sensitized silicon-based avalanche photodiode array device
  • Blue-light-sensitized silicon-based avalanche photodiode array device
  • Blue-light-sensitized silicon-based avalanche photodiode array device

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specific Embodiment approach 1

[0034] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT 1. This embodiment is described with reference to FIG. 1 to FIG. 5 . The blue light-sensitized silicon-based APD array device provided in this embodiment includes multiple detection units, multiple isolation regions 10 and multiple electrode leads 11 .

[0035] Among them, a plurality of detection units are regularly arranged to form an array, and each detection unit includes an anode 1, a non-depletion layer 2, an absorption layer 3, a field control layer 5, an avalanche layer 6, a substrate layer 7, a cathode 8 and a light-transmitting layer 9. The field control layer 5 , the absorption layer 3 and the non-depletion layer 2 are sequentially arranged on the upper surface of the avalanche layer 6 from bottom to top. A doped junction 4 is provided inside the absorption layer 3 , the lower surface of the doped junction 4 is in contact with the upper surface of the field control layer 5 , and there is a distance between the ...

specific Embodiment approach 2

[0043] Specific embodiment 2. For the parallel electrode structure array device, and the light-transmitting layer 9 and the anode 1 are all located on the same plane, the combination Image 6 To illustrate the present embodiment, the basic process steps are as follows:

[0044] Step 1. Select a highly doped n+ type silicon wafer as the substrate material of the APD, and perform cleaning treatment; the impurities are pentavalent elements such as P and As.

[0045] Step 2. Deposit a silicon epitaxial layer on the substrate material by techniques such as vapor phase epitaxy (VPE) or molecular beam epitaxy (MBE), as the p-type avalanche layer 6 of the APD; the grown epitaxial material is low doping concentration and low defect silicon.

[0046] Step 3, growing a p-type Si-based field control layer 5 on the avalanche layer 6 by vapor phase epitaxy or molecular beam epitaxy.

[0047] Step 4: After the field control layer 5 is prepared, a p-type Si-based absorption layer 3 is grown...

specific Embodiment approach 3

[0065] Specific embodiment 3. The manufacturing process for the case where part of the lower surface of the light-transmitting layer 9 of the blue-light-sensitized silicon-based APD array device is in contact with the non-depleted layer 2, and the remaining part is in contact with the upper surface of the anode 1: the specific Step 14 and Step 15 in Embodiment 2 are combined and changed to: prepare an anti-reflection film with a thickness of about 0.1-5 μm on the upper surface of the non-depleted layer 2 and the anode 1 by low-temperature evaporation method as the transparent layer of the APD. Light layer 9.

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Abstract

The invention relates to a blue-light-enhanced silicon-based avalanche photodiode array device, which belongs to the field of photoelectric technology. The problem of low sensitivity to blue light caused by the surface recombination effect of the avalanche photodiode in the prior art is solved, and its absorption of blue light is better increased, and its cut-off frequency and gain are improved. The array device of the present invention includes a plurality of detection units, a plurality of isolation regions, and a plurality of electrode leads; the plurality of detection units are arranged according to rules to form an array, and each detection unit includes a non-depletion layer arranged in sequence from top to bottom, The absorption layer, the field control layer, the avalanche layer, and the substrate layer with doped junctions inside, also include the anode and light-transmitting layer arranged on the upper surface of the non-depleted layer, and the cathode arranged on the lower surface of the substrate layer; the isolation area is set Between two adjacent detection units; the electrode leads are connected to electrodes between multiple detection units, and the connection mode is series connection, parallel connection, first series connection and then parallel connection, or first parallel connection and then series connection. The array device has high blue light responsivity and high quantum efficiency of the device.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, and in particular relates to a blue light-sensitized silicon-based avalanche photodiode array device. Background technique [0002] An avalanche photodiode (APD) is a photosensitive element commonly used in the field of optical communications. After a reverse bias is applied to the P-N junction of a photodiode made of silicon or germanium, the incident light will be absorbed by the P-N junction to form a photocurrent, and increasing the reverse bias will produce an "avalanche" ( That is, the photocurrent exponentially increases), this kind of diode is called "avalanche photodiode". [0003] The working principle of the avalanche photodiode is to use the directional movement of photo-generated carriers in a strong electric field to generate an avalanche effect to obtain the gain of photocurrent. In the avalanche process, the photogenerated carriers move in a high-speed direction under th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/144H01L31/0224H01L31/0352H01L31/107H01L31/18
Inventor 王维彪梁静秋高丹张军秦余欣吕金光陶金王浩冰
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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