Unlock instant, AI-driven research and patent intelligence for your innovation.

Trench Schottky barrier diode and manufacturing method thereof

A technology for Schottky diodes and manufacturing methods, which are applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem that the reverse blocking effect of Schottky diodes needs to be improved, the electric field distribution of Schottky diodes is uneven, etc. problem, to achieve the effect of improving reverse blocking characteristics, reducing size, and low forward on-resistance

Inactive Publication Date: 2019-05-03
FUJIAN ANTE MICROELECTRONICS CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional method has the following disadvantages: the electric field distribution in the Schottky diode is uneven, resulting in the reverse blocking effect of the Schottky diode to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Trench Schottky barrier diode and manufacturing method thereof
  • Trench Schottky barrier diode and manufacturing method thereof
  • Trench Schottky barrier diode and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] Please refer to Figure 1 to Figure 6 As shown, a preferred embodiment of a trench Schottky diode 100 in the present invention includes an N- epitaxial layer 1 and an N+ substrate layer 2, and the N- epitaxial layer 1 is arranged on the N+ substrate layer 2 Above; the dopant concentration of the N- epitaxial layer 1 changes linearly in the vertical direction, and the dopant concentration near the N+ substrate layer 2 is the largest; the dopant is phosphorus or arsenic, and the dopant is obtained by doping the dopant The resistivity of the N- epitaxial layer 1 and the N+ substrate layer 2 can be changed, thereby changing the conductivity; the dopant concentration of the N+ substrate layer 2 is greater than the dopant concentration of the N- epitaxial layer 1, and the doping of the N+ substrate layer 2 The agent concentration is greater than 1×10 19 piece / cm 3 , the dopant concentration of N- epitaxial layer 1 is less than 1×10 19 piece / cm 3 .

[0040] The N-epitaxia...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a trench Schottky barrier diode, and the diode comprises an N- epitaxial layer and an N+ substrate layer, wherein the N- epitaxial layer is arranged above the N+ substrate layer; the dopant concentration of the N- epitaxial layer linearly changes in the vertical direction, and the dopant concentration at a position close to the N + substrate layer is maximum. The invention provides a manufacturing method for the trench Schottky barrier diode. The Schottky barrier diode has the advantage that the reverse blocking characteristic of the Schottky barrier diode is improved.

Description

technical field [0001] The invention relates to the field of semiconductor discrete devices, in particular to a trench Schottky diode and a manufacturing method thereof. Background technique [0002] The abbreviation of Schottky Barrier Diode is SBD, which is a majority carrier device that uses the contact barrier between metal and semiconductor to work. Compared with ordinary P-N structure diodes, this kind of diode has the characteristics of small forward voltage drop and fast speed, so it is widely used in modern communications, ultra-high-speed devices, microwave circuits and high-speed integrated circuits. [0003] For Schottky diodes, the two most important parameters affecting power consumption are forward voltage drop VF and reverse leakage current IR. For Schottky diodes in silicon epitaxial processes, the forward voltage drop VF depends on the barrier alloy layer used, epitaxy conditions (epitaxy layer thickness and resistivity) and active area area. For Schottky...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L21/329H01L29/06
Inventor 黄赛琴黄福仁肖歩文
Owner FUJIAN ANTE MICROELECTRONICS CO LTD