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High voltage metal oxide semiconductor element and manufacturing method thereof

A technology for manufacturing oxide semiconductors and components, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc.

Active Publication Date: 2022-03-01
RICHTEK TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, Figure 2A and 2B The disadvantage of the prior art shown in is that when the body connection region 28 is formed, the ion implantation step region defined by it often includes the P-type gate region 23", because the prior art always uses the gate Pole 23 is regarded as a self-aligning shield, which can be self-aligning to the range of body connection area 28

Method used

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  • High voltage metal oxide semiconductor element and manufacturing method thereof
  • High voltage metal oxide semiconductor element and manufacturing method thereof
  • High voltage metal oxide semiconductor element and manufacturing method thereof

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Embodiment Construction

[0057] The drawings in the present invention are all schematic diagrams, mainly intended to represent the process steps and the upper and lower sequence relationship among the layers, and the shapes, thicknesses and widths are not drawn to scale.

[0058] see Figure 3A , 3B 3C and 3C show the first embodiment of the present invention, in which the top view and the corresponding first cross-sectional view (corresponding Section line AA' in the top view) and a second sectional view (corresponding to section line BB' in the top view). Such as Figure 3A , 3B As shown in 3C, the high-voltage MOS element 3 is formed on a semiconductor substrate 11 in a vertical direction (such as Figure 3B Or the direction of the dashed arrow in 3C, the same below), with an upper surface 11' and a lower surface 11" opposite to each other; the high-voltage MOS element 3 includes: a well region 12, a body region 16, a drain 17, a gate 33, a source 34, and the body connection area 38.

[0059]...

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Abstract

A high-voltage metal-oxide-semiconductor element and its manufacturing method, the high-voltage metal-oxide-semiconductor element includes: a well region, a body region, a gate, a source, a plurality of body connection regions, and a drain. A plurality of body connection regions are formed in the body region, wherein each body connection region is located below and contacts the upper surface in the longitudinal direction, and is adjacent to or not adjacent to the gate in the lateral direction. The plurality of body connection regions are arranged substantially parallel in the width direction, and two adjacent body connection regions are not adjacent to each other in the width direction. The gate has a polysilicon layer as one and only electrical contact of the gate, and all parts of the polysilicon layer have the first conductivity type.

Description

technical field [0001] The present invention relates to a high voltage metal oxide semiconductor (Metal Oxide Semiconductor, MOS) element, in particular to a high voltage metal oxide semiconductor element with multiple body connection regions. The invention also relates to a method of manufacturing a high-voltage metal-oxide-semiconductor component. Background technique [0002] Figure 1A and 1B A schematic top view and a corresponding cross-sectional schematic view of a prior art high-voltage metal-oxide-semiconductor device (N-type high-voltage MOS device 1 and high-voltage MOS device 1') are respectively shown. Such as Figure 1A and 1B As shown, the high-voltage MOS element 1 and the high-voltage MOS element 1' are arranged as mirror images of each other, and are formed on a semiconductor substrate 11, wherein the semiconductor substrate 11 has an opposite upper surface 11' and a lower surface 11" in the vertical direction. Among them, the high-voltage MOS Element 1 ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/78H01L21/336
Inventor 黄宗义陈巨峰叶昱廷
Owner RICHTEK TECH