Crystalline silicon double-sided battery and heat treatment method for the crystalline silicon double-sided battery
A heat treatment method, double-sided battery technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve problems such as difficult to obtain effects, and achieve the effects of improving efficiency and structure, achieving double-sided rate, and overcoming the increase in series resistance
Active Publication Date: 2021-05-11
CSI CELLS CO LTD +1
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Problems solved by technology
However, when the above scheme is used for P-type silicon wafers with low volume resistivity, it is difficult to achieve ideal results. Therefore, it is necessary to provide a new crystalline silicon double-sided battery and a heat treatment method for the crystalline silicon double-sided battery.
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[0024] The present invention will be described in detail below with reference to the embodiments shown in the accompanying drawings. However, this embodiment does not limit the present invention, and any structural, method, or functional changes made by those skilled in the art according to this embodiment are included in the protection scope of the present invention.
[0025] ginseng figure 1 and figure 2 As shown, the crystalline silicon bifacial battery 100 provided by the present invention includes a silicon substrate 10 , a front metallization layer (not shown) and a back metallization layer 20 disposed on both sides of the silicon substrate 10 . The backside metallization layer 20 includes backside main gate lines 21 and backside auxiliary gatelines 22 arranged perpendicularly to each other. The back busbar 21 includes a first busbar segment 211 and a second busbar segment 212 connected end to end, and the width of the first busbar segment 211 in a direction perpendic...
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Abstract
The invention provides a crystalline silicon double-sided battery and a heat treatment method for the crystalline silicon double-sided battery. The crystalline silicon double-sided battery includes a silicon substrate and a back metallization layer, and the resistivity of the silicon substrate is set to 0.3-0.8 Ω·cm, the light shielding rate of the back metallization layer is no more than 23%. The heat treatment method for the above-mentioned crystalline silicon double-sided battery mainly includes heating the crystalline silicon double-sided battery to be processed to the first threshold temperature, and then passing forward current to continue heating; heat preservation treatment, the heat preservation treatment process includes at least two sub-stages and the During the heat preservation treatment process, the forward current is kept flowing; the crystalline silicon double-sided battery that has completed the heat preservation treatment is cooled to the second threshold temperature, and the current flow is stopped. The crystalline silicon bifacial cell reduces the light-shielding area of the metallization layer on the back, improves the bifacial rate, and does not reduce the conversion efficiency of the front side; furthermore, the aforementioned heat treatment method can effectively reduce the risk of attenuation.
Description
technical field [0001] The invention relates to the technical field of photovoltaic manufacturing, in particular to a crystalline silicon double-sided battery and a heat treatment method for the crystalline silicon double-sided battery. Background technique [0002] The photovoltaic industry has made continuous progress in recent years, and crystalline silicon cells still occupy an important market position due to many factors such as relatively mature technology development, stable materials, and controllable costs. Crystalline silicon double-sided cells can bring significant efficiency gains through radiation absorption on the back surface, which is regarded as an important trend in the development of future cells. Compared with the traditional crystalline silicon cell, the crystalline silicon bifacial cell replaces the all-aluminum back field with alternately arranged Al grid lines, and realizes radiation absorption on the back surface through the light-transmitting hollo...
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IPC IPC(8): H01L31/0224H01L31/18
CPCY02P70/50
Inventor 姚铮吴华德熊光涌吴坚蒋方丹邢国强
Owner CSI CELLS CO LTD