Method for manufacturing light-emitting diode crystal grains

Abstract

A method for manufacturing a light-emitting diode die, comprising the steps of: providing a first substrate; forming a buffer layer on a surface of the first substrate; forming a UV light on the surface of the buffer layer away from the first substrate a light shielding layer; at least one light emitting diode die is formed by epitaxial growth on the surface of the ultraviolet shielding layer away from the buffer layer; a second substrate is provided, and an adhesive layer is formed on a surface of the second substrate ; Install the side of each light-emitting diode die away from the first substrate on the second substrate through the adhesive layer; from the side of the first substrate away from the light-emitting diode die to the second substrate The first substrate is irradiated with ultraviolet light to separate the LED die from the first substrate; the ultraviolet light shielding layer combined on the LED die is removed by etching; and the second substrate and the adhesive are removed adhesive layer to obtain the light-emitting diode crystal.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor element, in particular to a method for manufacturing a light-emitting diode crystal grain. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is a semiconductor element that can convert electric current into light in a specific wavelength range. Light-emitting diodes can be widely used as light sources in the field of lighting because of their advantages such as high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life. [0003] When the traditional light-emitting diode crystal grains are laser-stripped from the substrate, take the manufacture of vertical structure light-emitting diodes as an example. The bonding material is a metal butt joint conductive substrate, so the laser energy intensity range is large; In other words, the bonding material needs to use glue, so the laser ene...

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Problems solved by technology

[0003] When the traditional light-emitting diode crystal grains are laser-stripped from the substrate, take the manufacture of vertical structure light-emitting diodes as an example. The bonding material is a metal butt joint conductive substrate, so the laser energy intensity range is large; In other words, the bonding material needs to use glue, so the laser energy is too small to separate the gallium nitride and sapphire substrates, and the laser energy is too large, it is easy to carbonize the glue layer between the LED die and the substrate, which makes it impossible to simply and effectively separate the GaN and sapphire substrates. Removing the glue layer will easily cause problems in the subsequent manufacturing process and reduce production efficiency

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