Growing method of Al-Ga-As-Sb four-component material

Abstract

The invention belongs to the technical field of electronic component manufacturing and relates to a growing method of an Al-Ga-As-Sb four-component material. The growing method comprises the steps that an InP substrate is loaded into a growing chamber of an MBE system, heating is conducted to remove a residual oxidation layer on the surface of the substrate, a buffer layer matched with InP substrate lattices grows, an Al<x>Ga<1-x>As<y>Sb<1-y> top layer section unit constituted by two layers of ultrathin materials grows on the basis of the buffer layer, repeated growing is conducted for n cycles, and thus the Al-Ga-As-Sb four-component top layer section material with the precisely controlled components can be obtained. According to the process, through an As / Sb or Al / Ga paired control method, the double layers serve as one cycle to enable the Al-Ga-As-Sb four-component material to grow in a component-precise mode, competition between As and Sb or Al and Ga in the material growing process is effectively avoided, and limitation of immiscible gaps to material growing is thoroughly avoided.

Description

technical field [0001] The invention relates to the technical field of manufacturing electronic components, in particular to a growth method for an AlGaAsSb four-component material. Background technique [0002] As a representative of renewable energy, solar cells have attracted widespread attention. Most of the current commercial monocrystalline silicon, polycrystalline silicon, and thin-film solar cells adopt a single P-N junction structure, which can only absorb and convert a small part of the full spectrum of the solar energy spectrum, so the photoelectric conversion efficiency is generally not high (less than 30%). To further improve cell efficiency, we can turn our attention to multi-cell solar cells. Multi-cell solar cells, as the name suggests, the cell structure is sequentially provided with light-absorbing layers with band gaps from large to small, so as to realize the sequential absorption of the solar spectrum from short wavelengths to long wavelengths, thereby ...

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Problems solved by technology

three-component AlAs 0.56 Sb 0.44 It matches the InP lattice and is easy to grow, but its direct band gap is EΓ=2.5eV, and its indirect band gap EX=1.85eV. The energy difference between the two is large, so a considerable part of the photogenerated carriers generated in the Γ energy valley will be released. Reaching the X energy valley, causing significant energy loss

But the four-component Al x Ga 1-x As y Sb 1-y There is a certain miscibility gap, and the material in the miscibility gap is in a metastable state, which is prone to decomposition and forms a stable two-phase or three-phase structure, resulting in a serious decline in material quality

Therefore, it is difficult for this material to grow in thermodynamic equilibrium

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