Unlock instant, AI-driven research and patent intelligence for your innovation.

Thin film transistor of flexible substrate and preparation method of thin film transistor

A technology of thin film transistors and flexible substrates, applied in the field of electronics, can solve the problems of high annealing temperature, unfavorable mass production and application of electronic devices, etc., achieve the effect of simple electrode growth process, reduce production time and economic cost

Inactive Publication Date: 2019-05-17
XIAN JIAOTONG LIVERPOOL UNIV
View PDF9 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation process of traditional semiconducting metal oxides generally needs to be based on a vacuum environment and requires a high annealing temperature, which is not conducive to the large-scale and low-cost production and application of electronic devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor of flexible substrate and preparation method of thin film transistor
  • Thin film transistor of flexible substrate and preparation method of thin film transistor
  • Thin film transistor of flexible substrate and preparation method of thin film transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Such as figure 1 The thin film transistor of the flexible substrate of the present invention shown, the whole device comprises substrate 101, gate electrode 104, insulating layer ZrO 2 Layer 105, insulating layer Li-doped Al 2 o 3 Layer 106, semiconductor layer In 2 o 3 layer 107 , a semiconductor layer ZnO layer 108 , and a source electrode 112 and a drain electrode 113 .

[0046] A kind of thin film transistor preparation method of flexible substrate

Embodiment 2

[0048] The process flow of thin film transistors for preparing flexible substrates, the steps are (take PI as an example for flexible substrates):

[0049] (1) Cleaning the PI substrate: The specific cleaning process is 20 minutes of ultrasonication with acetone, 20 minutes of ultrasonication with ethanol, rinse with deionized water, and dry with nitrogen.

[0050] (2) Perform PLASMA treatment on the PI substrate: Cover the substrate with a rectangular specific mask plate 102, 103 with a hollow part of 20 μm in width and a length greater than 10000 μm, and clean it with a plasma cleaning agent for 30 minutes, such as Figure 2a shown;

[0051] (3) Configure electrode solution, mix 0.902g In(NO 3 ) 3 ·3H 2 O with 0.420g SnCl 2 Dissolved in 20mL deionized water, ultrasonicated for 15 minutes to make a solution ① and dropped on the PI substrate,

[0052] (4) Growth gate electrode: Spin-coat in air at a speed of 4000rpm for 30 seconds, and then anneal at 200°C for 1 hour, as ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electron mobilityaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of microelectronic devices, and particularly discloses a low-cost thin film transistor utilizing a solution method and a heterojunction conductive principle and a preparation method of the thin film transistor. According to the thin film transistor, a flexible material is used as a substrate, and a grid electrode, an insulating layer, a heterojunction semiconductor layer and source and leakage electrodes which are prepared based on the solution method are arranged on the flexible material. The gate electrode, the source electrode and the leakage electrode aremade of ITO materials prepared by an aqueous solution method, and the gate electrode is patterned by using a modified hydrophilic method. The insulating layer is made of an Al2O3 / ZrO2 stack preparedby the aqueous solution method, and the dielectric constant is improved by doping Li element to improve the performance of the whole thin film transistor. The semiconductor layer is a ZnO / In2O3 stack,the structure can form heterogeneous junction, and the electron mobility is improved based on a two-dimensional electron gas principle. The whole preparation process can be carried out under the condition of non-vacuum atmosphere, and the temperature is not more than 200 DEG C, the production cost is low, and meanwhile, the whole thin film transistor is a transparent device and can have importantapplication in the field of optics.

Description

technical field [0001] The technical field of the invention relates to an electronic device, in particular to a heterojunction thin film transistor based on a flexible substrate and a Li-doped insulating layer. Background technique [0002] In recent years, there has been an increasing demand for increased resolution, screen area and reduced power consumption in flat panel displays (FPDs) including active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting diodes (AMOLEDs). Thin-film transistors (TFTs) are key devices for FPDs in production applications. The relatively high carrier mobility, transparency, uniformity, and electrical stability make metal oxides considered to be important materials that can replace traditional amorphous silicon as semiconductors in TFTs. The preparation process of traditional semiconductor metal oxides generally needs to be carried out in a vacuum environment and requires a high annealing temperature, which is not ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/34H01L21/02H01L29/786
Inventor 赵天石赵春赵策洲杨莉于水长傅剑峰谷俊宏
Owner XIAN JIAOTONG LIVERPOOL UNIV