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Magnetic tunnel junctions

A technology of magnetic tunneling and surface structure, which is applied to parts of electromagnetic equipment, resistors for magnetic field control, and manufacturing/processing of electromagnetic devices, etc. And other issues

Inactive Publication Date: 2019-05-21
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Some of the above processes may damage the magnetic tunnel junction layer and compromise the electrical properties of the resulting magnetic tunnel junction structure.

Method used

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Embodiment Construction

[0013] The present disclosure provides many different embodiments or examples for implementing different features of the subject matter provided herein. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, this is just an example and not intended to be limiting. For example, the formation of the first feature above the second feature in the following description may include an embodiment where the first feature is formed in direct contact with the second feature, and may also include an additional feature that may be formed between the first feature and the second feature, An embodiment in which the first feature is not in direct contact with the second feature. In addition, the present disclosure may repeat element symbols and / or letters in various examples. This repetition does not in itself dictate a relationship between the various embodiments and / or configurations discussed herein.

[0014] Further, for t...

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Abstract

The present disclosure describes a method utilizing an ion beam etch process, instead of a RIE etch process, to form magnetic tunnel junction (MTJ) structures. For example, the method includes formingMTJ structure layers on an interconnect layer, where the interconnect layer includes a first area and a second area. The method further includes depositing a mask layer over the MTJ structure layersin the first area and forming masking structures over the MTJ structure layers in the second area. The method also includes etching with an ion beam etch process, the MTJ structure layers between themasking structures to form MTJ structures over vias in the second area of the interconnect layer; and removing, with the ion beam etch process, the mask layer, the top electrode, the MTJ stack, and aportion of the bottom electrode in the first area of the interconnect layer.

Description

technical field [0001] The disclosed embodiments relate to a method for forming a magnetic tunnel junction structure. Background technique [0002] A magnetic tunneling junction (MTJ) is an integral part of a magnetic random access memory (MRAM). The manufacturing process of the magnetic tunnel junction structure may involve various operations, such as metal and dielectric deposition, photolithography, and etching processes, among others. Some of the above processes may damage the magnetic tunnel junction layer and damage the electrical properties of the resulting magnetic tunnel junction structure. Contents of the invention [0003] The disclosure provides a method for forming a magnetic tunnel junction structure, including forming a magnetic tunnel junction (magnetic tunnel junction; MTJ) structure layer on an interconnection layer, and the structure layer includes a magnetic tunnel junction interposed between a top electrode and a bottom electrode. The tunnel junction...

Claims

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Application Information

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IPC IPC(8): H01L43/12H01L43/08H01L43/02
CPCH10B61/00H10N50/01H10N50/10H10N50/80H10N50/85
Inventor 戴品仁李忠儒林仲德吕志伟田希文彭泰彦李乾铭廖韦豪
Owner TAIWAN SEMICON MFG CO LTD