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A kind of cadmium telluride thin-film solar cell and its optimized post-processing method

A technology of solar cells and cadmium telluride, applied in the field of solar cells, can solve the problems of unfavorable long-term development, high toxicity, and reduced battery performance, etc.

Active Publication Date: 2021-07-06
CNBM CHENGDU OPTOELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this process is that it is highly toxic and coated with CdCl 2 The equipment needs to build a separate closed room, the environment configuration requirements are high, and the maintenance cost is relatively high
On the one hand, the study found that CdCl 2 The efficiency of the treated CdTe / CdS heterojunction solar cells is greatly improved, but CdCl 2 It is highly toxic and carcinogenic, which is not conducive to long-term development; on the other hand, there are Te precipitates in the cadmium telluride thin film layer, and the existence of these precipitates is equivalent to the trap center of photogenerated carriers, thereby reducing the performance of the battery

Method used

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  • A kind of cadmium telluride thin-film solar cell and its optimized post-processing method
  • A kind of cadmium telluride thin-film solar cell and its optimized post-processing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] S1 selects FTO glass with a transmittance greater than 80% as the base material, and washes it with acetone and deionized water respectively.

[0054] S2 Face the conductive surface of the FTO glass cleaned in step S1 to the evaporation source with a distance of 2mm, heat the FTO glass to 500°C, heat the cadmium sulfide powder to 550°C, and control the film thickness to 80nm by the evaporation time.

[0055] S3 deposits cadmium telluride absorbing layer on the cadmium sulfide layer, the distance between the substrate and the evaporation source is 10mm, the temperature of the substrate is kept at 550°C, the heating temperature of the cadmium telluride powder is 600°C, and the pressure of the cadmium telluride deposition chamber is 1000Pa, and the film is controlled The thickness is 2.8um.

[0056] S4 with 0.15mol / L of MgCl2 and 0.04mol / L of Ga 2 (SO4) 3 Stir for 60 minutes to make a uniform mixed solution, add HCl or H 2 SO 4 The pH value of the mixed solution was ad...

Embodiment 2

[0062] S1 selects FTO glass with a transmittance greater than 80% as the base material, and washes it with acetone and deionized water respectively.

[0063] S2 Face the conductive surface of the FTO glass cleaned in step S1 to the evaporation source with a distance of 2mm, heat the FTO glass to 500°C, heat the cadmium sulfide powder to 550°C, and control the film thickness to 80nm by the evaporation time.

[0064] S3 deposits cadmium telluride absorbing layer on the cadmium sulfide layer, the distance between the substrate and the evaporation source is 10mm, the temperature of the substrate is kept at 550°C, the heating temperature of the cadmium telluride powder is 600°C, and the pressure of the cadmium telluride deposition chamber is 1000Pa, and the film is controlled The thickness is 2.8um.

[0065] S4 uses 0.25mol / L of MgCl2 and 0.05mol / L of Ga 2 (SO4) 3 Stir for 60 minutes to make a uniform mixed solution, add HCl or H 2 SO 4 The pH value of the mixed solution is adj...

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Abstract

The invention discloses a cadmium telluride thin-film solar cell and an optimized post-treatment method thereof, comprising an FTO glass layer, a CdS layer, a CdTe layer, an activation layer, a copper metal layer, and a molybdenum layer arranged in sequence; the activation layer includes MgCl 2 and Ga 2 (SO 4 ) 3 . The cadmium telluride thin-film solar cell of the invention has low toxicity, low requirements for environment configuration, low maintenance cost, greatly improved efficiency of the solar cell, and excellent performance of the cell.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a cadmium telluride thin-film solar cell and an optimized post-processing method thereof. Background technique [0002] The absorption coefficient of cadmium telluride is 100 times that of silicon materials. It is a direct gap material. It absorbs very well in the whole spectrum and has a good weak light effect. In the weak light conditions such as early morning and evening, the light absorption is obviously better than that of crystalline silicon cells with indirect band gap materials. There is no intrinsic light-induced attenuation effect, and the working life is long. It is estimated that 80% output power is guaranteed for 20-30 years. Therefore, it is mainly used in high-efficiency thin-film solar cells. If it is designed as a strip series battery, it will help reduce the hot spot effect, improve its power generation capacity, and ensure product life. Cadmium telluride thin-film ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/072H01L31/0336H01L31/18
CPCY02E10/50Y02P70/50
Inventor 彭寿马立云潘锦功傅干华邬小凤
Owner CNBM CHENGDU OPTOELECTRONICS MATERIAL