A kind of cadmium telluride thin-film solar cell and its optimized post-processing method
A technology of solar cells and cadmium telluride, applied in the field of solar cells, can solve the problems of unfavorable long-term development, high toxicity, and reduced battery performance, etc.
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Embodiment 1
[0053] S1 selects FTO glass with a transmittance greater than 80% as the base material, and washes it with acetone and deionized water respectively.
[0054] S2 Face the conductive surface of the FTO glass cleaned in step S1 to the evaporation source with a distance of 2mm, heat the FTO glass to 500°C, heat the cadmium sulfide powder to 550°C, and control the film thickness to 80nm by the evaporation time.
[0055] S3 deposits cadmium telluride absorbing layer on the cadmium sulfide layer, the distance between the substrate and the evaporation source is 10mm, the temperature of the substrate is kept at 550°C, the heating temperature of the cadmium telluride powder is 600°C, and the pressure of the cadmium telluride deposition chamber is 1000Pa, and the film is controlled The thickness is 2.8um.
[0056] S4 with 0.15mol / L of MgCl2 and 0.04mol / L of Ga 2 (SO4) 3 Stir for 60 minutes to make a uniform mixed solution, add HCl or H 2 SO 4 The pH value of the mixed solution was ad...
Embodiment 2
[0062] S1 selects FTO glass with a transmittance greater than 80% as the base material, and washes it with acetone and deionized water respectively.
[0063] S2 Face the conductive surface of the FTO glass cleaned in step S1 to the evaporation source with a distance of 2mm, heat the FTO glass to 500°C, heat the cadmium sulfide powder to 550°C, and control the film thickness to 80nm by the evaporation time.
[0064] S3 deposits cadmium telluride absorbing layer on the cadmium sulfide layer, the distance between the substrate and the evaporation source is 10mm, the temperature of the substrate is kept at 550°C, the heating temperature of the cadmium telluride powder is 600°C, and the pressure of the cadmium telluride deposition chamber is 1000Pa, and the film is controlled The thickness is 2.8um.
[0065] S4 uses 0.25mol / L of MgCl2 and 0.05mol / L of Ga 2 (SO4) 3 Stir for 60 minutes to make a uniform mixed solution, add HCl or H 2 SO 4 The pH value of the mixed solution is adj...
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