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A stress-assisted positioning nanofabrication method and nanostructures prepared therefrom

An auxiliary positioning and nanofabrication technology, applied in the field of nanostructures, can solve problems such as difficult to achieve batch preparation of ordered nanostructures, pollution and structural damage

Active Publication Date: 2021-09-14
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to overcome the problems of easy pollution and structural damage during the processing described in the prior art, the difficulty in realizing the batch preparation of ordered nanostructures, and the difficulty in performing high-precision fabrication on existing micro-nano structures, especially vertical micro-nano structures. To locate the defects of nanofabrication, a stress-assisted positioning nanofabrication method is provided. The provided positioning nanofabrication method can realize precise positioning nanofabrication without high-precision nanolithography technology. The processing process will not cause pollution and structural damage, and can Perform high-precision positioning nanofabrication on existing micro-nano structures, especially vertical micro-nano structures, and have batch preparation capabilities

Method used

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  • A stress-assisted positioning nanofabrication method and nanostructures prepared therefrom
  • A stress-assisted positioning nanofabrication method and nanostructures prepared therefrom
  • A stress-assisted positioning nanofabrication method and nanostructures prepared therefrom

Examples

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Embodiment 1

[0044] A stress-assisted positioning nanofabrication method, the specific preparation process is as follows figure 2 shown, including the following steps:

[0045] (1) if figure 2 Shown in (i), utilize plasma-enhanced chemical vapor deposition to deposit a silicon dioxide mask layer with a thickness of about 500nm on the silicon substrate 6; Resist (negative photoresist, ARN-7520). Then use a photolithography system to expose on the photoresist. Then, the photoresist dot array is obtained by developing, and the developing solution used in the developing process is configured by tetramethylammonium hydroxide (TMAH) and ultrapure water according to the volume ratio of 4:1; then, using the plasma anisotropy The silicon dioxide is etched, and the pattern of the photoresist array is transferred to the silicon dioxide mask layer, thereby forming a silicon dioxide lattice mask 5 .

[0046] (2) if figure 2 As shown in (ii), the silicon is isotropically etched by plasma to obta...

Embodiment 2

[0054] The experimental method is the same as that of Example 1, the only difference is that the silica shell layer in step (7) is prepared by a coating process, for example, chemical vapor deposition.

Embodiment 3

[0056] The experimental method is the same as in Example 2, except that the silicon dioxide film used as the shell layer in step (7) is replaced with other constituent molecules, atomic volume or lattice constant or a material whose thermal expansion coefficient is greater than silicon, for example, elemental germanium , silicon nitride.

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Abstract

The invention discloses a stress-assisted positioning nano-processing method and a nanostructure prepared therefrom. The stress-assisted positioning nano-processing method comprises: selecting a core material and a shell material to form a core-shell structure, and performing heat treatment on the core-shell structure The interface of the core-shell structure forms a non-uniaxial tensile stress; the shape of the interface of the core-shell structure is controlled to locate the position of the maximum value of the non-uniaxial tensile stress; the non-uniaxial tensile stress is directly broken and pulled For the surface layer on the stretched side, the maximum value of the non-uniaxial tensile stress is greater than the tensile stress rupture threshold of the material on the stretched side. Alternatively, the maximum value of the non-uniaxial tensile stress is smaller than the tensile stress fracture threshold of the material on the stretched side and is in the same order of magnitude; the heat treatment is performed in an oxidative gas atmosphere. The stress-assisted positioning nanofabrication method provided by the present invention can realize precise positioning nanofabrication without high-precision nanolithography technology, and will not cause pollution and structural damage during the processing, and can be used in existing micro-nano structures, especially vertical micro-nano structures. Structurally, high-precision positioning nanofabrication is carried out, and it has the ability to prepare in batches.

Description

technical field [0001] The invention relates to the technical field of micro-nano structure processing, and more specifically, to a stress-assisted positioning nano-processing method and a nano-structure prepared therefrom. Background technique [0002] Micro-nano processing technology has been widely used in the processing and manufacturing of modern micro-nano electronic devices, micro-nano optoelectronic devices, and micro-nano phononic devices. Among them, high-precision positioning nanofabrication methods are the key to fabricating new nanodevices, such as gate-all-around field-effect transistors, single-electron transistors, single-impurity devices, nanothermoelectric coolers, and spintronic devices. [0003] At present, researchers have developed focused ion beam (FIB) processing, local induced oxidation based on atomic force microscopy (AFM) and other methods to achieve high-precision positioning nanofabrication. FIB uses focused ion beam bombardment to remove atoms...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B82Y40/00
Inventor 佘峻聪曾妙璇黄一峰邓少芝许宁生陈军
Owner SUN YAT SEN UNIV