A method for doping gallium nitride material with iron element
A technology of iron element and gallium nitride, which is applied in the field of gallium nitride material doped with iron element, can solve the problem of iron impurity entry, etc., to improve the breakdown voltage, reduce the risk of entering the GaN channel, and improve reliability Effect
Active Publication Date: 2021-12-24
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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[0004] The embodiment of the present invention provides a method for doping gallium nitride material with iron element, aiming to solve the problem in the prior art that iron impurities still enter the channel of GaN material after the iron source is turned off during the process of doping iron element with oxide doping material. question
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[0024] In order to enable those skilled in the art to better understand this solution, the technical solution in this solution embodiment will be clearly described below in conjunction with the accompanying drawings in this solution embodiment. Obviously, the described embodiment is a part of this solution Examples, but not all examples. Based on the embodiments in this solution, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of this solution.
[0025] The term "comprising" and any other variants in the description and claims of this solution and the above drawings mean "including but not limited to", and are intended to cover non-exclusive inclusion. In addition, the terms "first" and "second", etc. are used to distinguish different objects, not to describe a specific order.
[0026] The realization of the present invention is described in detail below in conjunction with specific accompa...
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Abstract
The invention discloses a method for doping a gallium nitride material with an iron element, comprising: growing a GaN material on a substrate, and injecting an iron element when growing the GaN material; stopping the injecting when the first preset condition is reached The iron element starts to feed in trimethyl indium; when the second preset condition is reached, the growth of the GaN material ends, and the feeding of the trimethyl indium stops. The present invention reduces the residue of Fe element on the surface and accelerates the analysis of residual Fe element by feeding trimethyl indium when the feeding of the iron element is stopped, thereby reducing the amount of Fe in the GaN material after the Fe source is turned off when growing the Fe-doped GaN material. The tailing phenomenon reduces the risk of Fe elements entering the GaN channel after the Fe source is turned off, improves the breakdown voltage of GaN devices, and improves the reliability of GaN devices.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for doping gallium nitride materials with iron elements. Background technique [0002] A high-quality GaN buffer layer is the working basis of GaN HEMT materials. The pinch-off characteristics of microwave transistors require the residual carrier concentration of the GaN buffer layer to be less than 10 15 cm -3 , most of the existing methods use Fe doping to obtain high-resistivity GaN buffer layers. [0003] Fe doping has a strong memory effect. When growing Fe-doped GaN materials, after the Fe source is turned off, due to the memory effect, there will be a relatively serious tailing phenomenon in the subsequently grown GaN materials, and even Fe Impurities enter the channel of the GaN material and affect electron mobility. Contents of the invention [0004] The embodiment of the present invention provides a method for doping gallium nitride mat...
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IPC IPC(8): H01L21/205H01L21/223C23C16/34C23C16/455
Inventor 尹甲运房玉龙王波张志荣郭艳敏李佳芦伟立冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP