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LED epitaxial wafer and growth method thereof

A technology of light-emitting diodes and growth methods, applied in the field of light-emitting diode epitaxial wafers and their growth, can solve problems such as LED luminous efficiency needs to be improved, and achieve the effects of promoting current expansion, improving luminous efficiency, and reducing migration rate

Active Publication Date: 2019-06-28
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The embodiment of the present invention provides a light-emitting diode epitaxial wafer and its growth method, which can solve the problem that the luminous efficiency of LEDs in the prior art still needs to be improved

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  • LED epitaxial wafer and growth method thereof
  • LED epitaxial wafer and growth method thereof
  • LED epitaxial wafer and growth method thereof

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Embodiment Construction

[0028] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.

[0029] The embodiment of the present invention provides a light emitting diode epitaxial wafer. figure 1 It is a schematic structural diagram of a light emitting diode epitaxial wafer provided by an embodiment of the present invention. See figure 1 The light emitting diode epitaxial wafer includes a substrate 1, a buffer layer 2, an N-type semiconductor layer 3, an active layer 4 and a P-type semiconductor layer 5, a buffer layer 2, an N-type semiconductor layer 3, an active layer 4 and a P-type semiconductor layer. The layer 5 is laminated on the substrate 1 in sequence.

[0030] figure 2 It is a schematic diagram of the structure of an N-type semiconductor layer provided by an embodiment of the present invention. See figure 2 The N-type se...

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Abstract

The invention discloses an LED epitaxial wafer and a growth method thereof and belongs to the technical field of semiconductors. The epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, wherein the N-type semiconductor layer includes a plurality of stacked structures which are successively stacked; each stacked structure includes a first sub-layer, a second sub-layer and a third sub-layer which are successively stacked; the material of the first sub-layer, the material of the second sub-layer and the material ofthe third sub-layer are all silicon-doped gallium nitride; the doping concentration of silicon in the first sub-layer of the plurality of stacked structures, the doping concentration of silicon in the second sub-layer of the plurality of stacked structures, and the doping concentration of silicon in the third sub-layer of the plurality of stacked structures are gradually decreased along the stacking direction of the plurality of stacked structures; and in the same stacked structure, the doping concentration of silicon in the first sub-layer is greater than the that in the third sub-layer, andthe doping concentration of silicon in the third sub-layer is greater than that in the second sub-layer. The LED epitaxial wafer can improve the luminous efficiency of an LED.

Description

Technical field [0001] The invention relates to the field of semiconductor technology, in particular to a light-emitting diode epitaxial wafer and a growth method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, abbreviated as: LED) is a semiconductor electronic component that can emit light. As a new type of high-efficiency, environmentally friendly, and green solid-state lighting source, LED is rapidly and widely used in traffic signal lights, automotive interior and exterior lights, urban landscape lighting, mobile phone backlights and other fields. The core component of the LED is the chip, and improving the luminous efficiency of the chip is the goal pursued continuously in the LED application process. [0003] The chip includes an epitaxial wafer and electrodes arranged on the epitaxial wafer. The existing LED epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semicond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/12H01L33/14H01L33/06H01L33/32H01L33/00
Inventor 姚振从颖胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD