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A wide-angle solar spectrum selective absorption film and its preparation method

A technology of spectrally selective and absorbing thin films, which is applied in the preparation of the thin films, in the field of wide-angle solar spectrum selective absorbing thin films, can solve the problems of long time consumption, high cost, and very sensitive incident light tilt angle, and achieves simple preparation methods and high absorption rate, the effect of good angular tolerance

Active Publication Date: 2022-04-05
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In order to overcome the above-mentioned prior art, the preparation method of micro-nano-structure thin film mostly relies on technologies such as electron beam exposure and ion beam etching, which are costly, time-consuming, and often very sensitive to the inclination angle of incident light, so it is difficult to extend to Technical defects of industrial production, provide a wide-angle solar spectrum selective absorption film, and also provide the preparation method of the film

Method used

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  • A wide-angle solar spectrum selective absorption film and its preparation method
  • A wide-angle solar spectrum selective absorption film and its preparation method
  • A wide-angle solar spectrum selective absorption film and its preparation method

Examples

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Embodiment 1

[0037] Such as figure 1 As shown, a wide-angle solar spectrum selective absorption film, from bottom to top is the substrate, SiO 2 Micro-nanospheres, C r Metal reflective layer, SiO 2 Dielectric interference layer, C r metal absorber layer and SiO 2 Dielectric anti-reflection layer; where r represents SiO 2 The radius of the micro-nanosphere, h 1 represents the thickness of the metal reflective layer, h 2 Represents SiO 2 The thickness of the dielectric interference layer, h 3 stands for C r The thickness of the metal absorbing layer, h 4 Represents SiO 2 The thickness of the dielectric anti-reflection layer, while requiring SiO 2 The dielectric interference layer must have an appropriate thickness to achieve optical interference.

[0038] In the specific implementation process, this structure enables the absorbing film to have high solar spectral absorptivity in the visible and near-infrared regions, and at the same time has good angle tolerance for obliquely inc...

Embodiment 2

[0047] More specifically, on the basis of Example 1, use the glue homogenizer of MYCRO company, the model is WS-650HZ-23NPP-UD3, take 0.3ml of SiO with a concentration of 100mg / ml with a needle tube 2 The solution is dropped on the single crystal Si wafer for spin coating, the acceleration is 80rpm / s, the acceleration is 25s, and the rotation is at a constant speed of 75s at 2000rpm.

[0048] In the specific implementation process, the present invention uses a domestic fully automatic magnetron sputtering coating machine to coat the absorbing film. Putting different substrates in the coating chamber, such as SiO 2 、C r , to spin-coat the SiO 2 The single crystal Si sheet of the micro-nano sphere is used as the substrate. The background vacuum pressure is controlled at 7×10 -4 Pa, argon gas is introduced, the flow rate is 80sccm, the working pressure is maintained at 0.4 Pa, C r metal reflective layer and C r The sputtering power of the metal absorbing layer is 50W, the p...

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Abstract

The invention provides a wide-angle solar spectrum selective absorption film, which includes a substrate, micro-nano spheres, a metal reflection layer, a dielectric interference layer, a metal absorption layer, and a dielectric anti-reflection layer; the micro-nano spheres are spin-coated on the The metal reflective layer is plated on the micro-nano sphere by magnetron sputtering; the dielectric interference layer is plated on the metal reflective layer by magnetron sputtering; the metal absorption layer is plated on the metal reflective layer by magnetron sputtering. Magnetron sputtering is plated on the dielectric interference layer; the dielectric antireflection layer is plated on the metal absorption layer by magnetron sputtering. The present invention also provides a method for preparing the absorbing film. The absorbing film prepared by the method has a high absorption rate in a wide wavelength band and has a good angle tolerance for incident light; and the preparation method is simple and suitable for large Area preparation, easy to realize industrial production.

Description

technical field [0001] The invention relates to the field of solar energy, more specifically, to a wide-angle solar spectrum selective absorption film, and to a preparation method of the film. Background technique [0002] Solar energy is a clean and sustainable energy source. Converting solar energy into heat energy is an important way to utilize solar energy. Therefore, how to improve the utilization efficiency of solar energy has received extensive attention from researchers. According to different absorption principles, traditional solar spectrum selective absorption films are mainly divided into four categories, namely multi-layer gradient films, metal ceramic films, semiconductor-metal tandem films, and multi-layer optical interference films. At present, the preparation methods of these four types of films are relatively simple and easy to industrialize, but there are also some corresponding problems in various types of films, such as the absorption band is not wide, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/16C23C14/10C23C14/02B05D1/40
CPCC23C14/35C23C14/165C23C14/10C23C14/024B05D1/40
Inventor 江绍基王虹张梓豪赵宇航莫云杰陈少飞
Owner SUN YAT SEN UNIV