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Cf/SiC composite material with effectively-improved interface bonding performance and preparation method of composite material

A technology of interface bonding and composite materials, which is applied in the field of carbon fiber reinforced silicon carbide ceramic matrix composite materials, can solve the problems of poor interface wetting performance, and achieve the effect of improving bonding performance, improving mechanical properties, and improving wetting performance

Inactive Publication Date: 2019-07-09
王小玲
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Aiming at the deficiencies of the prior art, the present invention provides a C f / SiC composite material and its preparation method solve the problem of C f / SiC composite material, in the preparation process, due to the liquid repellency on the surface of carbon fiber, the technical problem of poor interfacial wetting performance between carbon fiber and silicon carbide matrix

Method used

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  • Cf/SiC composite material with effectively-improved interface bonding performance and preparation method of composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] C above f The preparation method of / SiC composite material comprises the following steps:

[0029] S101. Take 50g of SiC ceramic powder with an average particle size ≤ 25um, 20g of C with an average particle size ≤ 10um f Powder, 5g of SiO with average particle size ≤ 100nm 2 Powder, 15g of ceramic binder with an average particle size ≤ 2.6um, for later use; wherein, the ceramic binder is made of 30%wtSiO 2 , 30% wt Al 2 o 3 , 25% wt ZrO 2 and 15%wtTiO 2 composition;

[0030] S102. Put the SiC powder in step S101 and 5 g of sodium silicate in 100 mL of distilled water, and disperse evenly by ultrasonic;

[0031] S103. Change C in step S101 f The powder particles are placed in 30mL distilled water together with 2g sodium pyrophosphate, and dispersed evenly by ultrasonic;

[0032] S104. SiO in step S101 2 Put the powder and 1g of sodium silicate in 20mL of distilled water, and ultrasonically disperse evenly;

[0033] S105. The SiC dispersion in step S102 is ad...

Embodiment 2

[0037] S101. Take 70g of SiC ceramic powder with an average particle size ≤ 25um, 10g of C with an average particle size ≤ 10um f Powder, 10g of SiO with average particle size ≤ 100nm 2 powder, 8g of ceramic binder with an average particle size ≤ 2.6um, for subsequent use; wherein, the ceramic binder is made of 30%wtSiO 2 , 30% wt Al 2 o 3 , 25% wt ZrO 2 and 15%wtTiO 2 composition;

[0038] S102. Put the SiC powder in step S101 and 5 g of sodium silicate in 100 mL of distilled water, and disperse evenly by ultrasonic;

[0039]S103. Change C in step S101 f The powder particles are placed in 30mL distilled water together with 2g sodium pyrophosphate, and dispersed evenly by ultrasonic;

[0040] S104. SiO in step S101 2 Put the powder and 1g of sodium silicate in 20mL of distilled water, and ultrasonically disperse evenly;

[0041] S105. The SiC dispersion in step S102 is added to the reactor equipped with a stirring device and a heating device, and at a stirring rate of...

Embodiment 3

[0045] S101. Take 60g of SiC ceramic powder with an average particle size ≤ 25um, 15g of C with an average particle size ≤ 10um f Powder, 8g of SiO with average particle size ≤ 100nm 2 powder, 12g of ceramic binder with an average particle size ≤ 2.6um, for subsequent use; wherein, the ceramic binder is made of 30%wtSiO 2 , 30% wt Al 2 o 3 , 25% wt ZrO 2 and 15%wtTiO 2 composition;

[0046] S102. Put the SiC powder in step S101 and 5 g of sodium silicate in 100 mL of distilled water, and disperse evenly by ultrasonic;

[0047] S103. Change C in step S101 f The powder particles are placed in 30mL distilled water together with 2g sodium pyrophosphate, and dispersed evenly by ultrasonic;

[0048] S104. the SiO in step S101 2 Put the powder and 1g of sodium silicate in 20mL of distilled water, and ultrasonically disperse evenly;

[0049] S105. The SiC dispersion in step S102 is added to the reactor equipped with a stirring device and a heating device, and at a stirring ra...

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Abstract

The invention relates to the technical field of carbon fiber reinforced silicon carbide ceramic matrix composite materials, and discloses a Cf / SiC composite material with effectively-improved interface bonding performance. The composite material comprises the following raw materials, in parts by weight: 50-70 parts of micron SiC ceramic powder, 10-20 parts of micron Cf powder, 5-10 parts of nano SiO2 powder, and 8-15 parts of a micron ceramic binding agent. The invention also discloses a preparation method of the Cf / SiC composite material with the effectively-improved interface bonding performance. The method provided by the invention solves the technical problem of poor interface wettability between carbon fibers and a silicon carbide matrix due to lyophobicity of a carbon fiber surface in the preparation process of a Cf / SiC composite material.

Description

technical field [0001] The invention relates to the technical field of carbon fiber reinforced silicon carbide ceramic matrix composite materials, in particular to a C f / SiC composite material and preparation method. Background technique [0002] Silicon carbide ceramics are widely used in high temperature and some harsh environments because of their high strength, high hardness, corrosion resistance, high temperature resistance and low density, especially in special parts of aerospace vehicles that need to withstand extremely high temperatures. potential. However, ceramics do not have the plastic deformation ability like metals, and there is almost no other energy-absorbing mechanism except for the generation of a new fracture surface to absorb surface energy during the fracture process, which severely limits its application as a structural material. [0003] Carbon fiber has the advantages of high specific strength, large specific modulus, good high-temperature mechanic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/80C04B35/565C04B35/622
CPCC04B35/806C04B35/565C04B35/622C04B2235/3418C04B2235/5248
Inventor 王小玲
Owner 王小玲