Semiconductor structures and methods of forming them

Abstract

A semiconductor structure and a forming method thereof, the forming method comprising: providing a substrate; forming an isolation film on the substrate; forming a through hole penetrating through the thickness of the isolation film in the isolation film; The fin portion of the hole, the top of the fin is flush with the top of the isolation film; part of the thickness of the isolation film is removed, and the isolation film remains as an isolation layer, and the top of the isolation layer is lower than the top of the fin. In the present invention, the step of forming the isolation film is performed before the step of forming the fin, avoiding the formation of the fin first and then forming the isolation film which causes the isolation film to be separated from the substrate and the fin. The problem of poor filling ability at the corners between the fins is conducive to improving the formation quality of the isolation film, which in turn helps to improve the formation quality of the isolation layer, and enhances the insulating effect of the isolation layer, thereby improving the semiconductor structure. performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] In semiconductor manufacturing, as the feature size of integrated circuits continues to decrease, the channel length of MOSFETs has also been shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, resulting in poor control ability of the gate to the channel, and short-channel effects (SCE: short-channel effects) more likely to happen. [0003] The Fin Field Effect Transistor (FinFET) has outstanding performance in suppressing the short channel effect. The gate of the FinFET can control the fin at least from both sides. Therefore, compared with the planar MOSFET, the gate of the FinFET has an The control ability is stronger, and the short channel effect can be well suppr...

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Problems solved by technology

[0004] However, the performance of semiconductor structures in the prior art still needs to be improved

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