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LED chip

A technology of light-emitting diodes and chips, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high price and poor acid corrosion resistance.

Active Publication Date: 2021-01-08
ELEC TECH OPTOELECTRONICS TECHWUHUCO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Indium in indium tin oxide (IndiumTinOxid, ITO) and gold (Au) in N-type and P-type electrodes are relatively expensive
In addition, the indium in indium tin oxide (Indium Tin Oxid, ITO) is easy to diffuse into the semiconductor, and its resistance to acid corrosion is poor

Method used

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  • LED chip
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Experimental program
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Effect test

Embodiment Construction

[0018] Such as figure 1 As shown, in one embodiment, a light-emitting diode chip is provided, including a substrate 1, an N-type layer 2, a stress release layer 5, a light-emitting layer 6, a P-type layer 7, a transparent conductive layer 12, an N-type electrode, P-type electrode. The N-type layer 2, the stress release layer 5, the light emitting layer 6, the P-type layer 7 and the transparent conductive layer 12 are sequentially stacked on the substrate 1, and the N-type electrode is arranged on the N-type layer 2, so The P-type electrode is disposed on the transparent conductive layer 12 .

[0019] The substrate 1 is the carrier of each functional layer on the LED chip. In this embodiment, the substrate 1 is a sapphire substrate. Of course, the substrate 1 can also be made of any other suitable material. Substrates, such as gallium nitride substrates, silicon carbide substrates or zinc oxide substrates.

[0020] The N-type layer 2 is an N-type semiconductor layer deposite...

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Abstract

The invention relates to a light emitting diode chip. The light emitting diode chip comprises a substrate, an N type layer, a stress release layer, a light emitting layer, a P type layer, a transparent conductive layer, a P type electrode and an N type electrode, wherein the N type layer, the stress release layer, the light emitting layer, the P type layer and the transparent conductive layer aresequentially stacked on the substrate 1; the N type electrode is arranged on the N type layer; the P type electrode is arranged on the transparent conductive layer; and the transparent conductive layer comprises a graphene layer and an ITO transparent conductive layer which are arranged in a stacked mode. According to the light emitting diode chip, graphene is used for replacing partial indium tinoxide to serve as a transparent conductive material, so that the material cost is reduced, and the light emitting efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a light-emitting diode chip with low contact resistance and high transmittance. Background technique [0002] Light-emitting diode is a semiconductor electronic component that can emit light. It is popular because of its small size, low energy consumption, long life, and low driving voltage. It is widely used in indicator lights, display screens and other fields. High brightness and high performance have become the development trend of light-emitting diodes. In order to meet the growing demand, it is imminent to improve the luminous efficiency of light-emitting diode chips. [0003] The existing light-emitting diode chip manufacturing method is to prepare a layer of indium tin oxide (IndiumTinOxid, ITO) on the epitaxial layer to improve the luminous efficiency, and use metal as the electrode of the light-emitting diode, and use the metal electrode extension strip to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/42H01L33/38
CPCH01L33/387H01L33/42
Inventor 陈柏君汪琼张国华祝庆陈柏松
Owner ELEC TECH OPTOELECTRONICS TECHWUHUCO