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Method of manufacturing support substrate for bonded wafer and method of manufacturing bonded wafer

A technology for supporting substrates and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as a large amount of equipment investment, and achieve the effect of reducing boron concentration

Active Publication Date: 2019-07-12
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] However, in order to replace the filter of the air-conditioning equipment in the clean room with a boron-free filter or a boron-adsorbed filter, not only a large investment in equipment is required, but also there is a problem that the wafer manufacturing operation must be stopped for a long time

Method used

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  • Method of manufacturing support substrate for bonded wafer and method of manufacturing bonded wafer
  • Method of manufacturing support substrate for bonded wafer and method of manufacturing bonded wafer
  • Method of manufacturing support substrate for bonded wafer and method of manufacturing bonded wafer

Examples

Experimental program
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Embodiment

[0073] (Invention Example 1)

[0074] according to figure 1 The flow chart shown below is used to fabricate a support substrate for bonding wafers. First, a silicon single crystal wafer (diameter: 200mm, crystal orientation , resistivity: 10000Ω·cm, p-type) obtained by the CZ method was prepared. The silicon wafer is subjected to a predetermined chamfering step, a grinding step, an etching step, a grinding step, and then SC-1 cleaning. A 1 nm native oxide film was formed on the surface of the supporting substrate subjected to such treatment.

[0075] Table 1

[0076]

[0077] Next, the silicon wafer was transported into the processing chamber of the vapor phase growth apparatus, and the silicon wafer was subjected to a heat treatment under a hydrogen atmosphere under the conditions shown in Table 1 to completely remove the natural oxide film on the surface of the silicon wafer. Then, the silicon wafer from which the natural oxide film was removed was transported into a ...

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Abstract

A method of manufacturing a support substrate for a bonded wafer capable of reducing the concentration of boron in a bonded wafer and a method of manufacturing a bonded wafer have been proposed. The first step of removing the oxide film on the surface of the first silicon wafer composed of the silicon single crystal to be bonded to the active layer substrate (step S1); and in the vapor phase growth apparatus, the first silicon A second step of forming an oxide film on the surface of the wafer to be bonded to the active layer substrate (step S2); and a third step of forming a polysilicon layeron the formed oxide film (step S3).

Description

technical field [0001] The present invention relates to a method of manufacturing a supporting substrate for a bonded wafer and a method of manufacturing a bonded wafer. Background technique [0002] Conventionally, SOI (Silicon On Insulator, silicon-on-insulator) wafers have been used as substrates for high-frequency (RF: Radio Frequency, radio frequency) devices. SOI wafers have silicon oxide (SiO 2 ) and other insulating films and active layers. [0003] A representative method of a method of manufacturing an SOI wafer is a bonding method. In this bonding method, an insulating film is formed on at least one of a support substrate and an active layer substrate, these substrates are bonded via the insulating film, and heat treatment is applied at a high temperature of about 1200° C. to thereby manufacture an SOI wafer (hereinafter An SOI wafer produced by the bonding method is referred to as a "bonded wafer"). [0004] In the above-mentioned bonded wafer, the RF treatme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/762
CPCH01L21/76251H01L21/02381H01L21/02488H01L21/02532H01L21/02595H01L21/0262
Inventor 稗田大辅
Owner SUMCO CORP