Thin film transistor array substrate and preparation method thereof
A technology for thin film transistors and array substrates is applied in the field of thin film transistor array substrates and their preparation, which can solve the problems of low leakage current and current switching ratio of thin film transistors, and achieve the effects of reducing leakage current, improving current switching ratio, and small contact potential barrier.
Active Publication Date: 2021-11-30
BEIHAI HKC OPTOELECTRONICS TECH CO LTD +1
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- Application Information
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Problems solved by technology
[0003] Based on this, it is necessary to provide a thin film transistor array substrate and its preparation method for the technical problems of obvious leakage current and low current switch ratio of thin film transistors in the TFT array substrate
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[0039] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. A preferred embodiment of the application is shown in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.
[0040] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application. As used herein, the term "and / or" includes any and all combinations of one or more of the associa...
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Abstract
The present application relates to a TFT array substrate and a preparation method thereof. The TFT array substrate comprises: a substrate; a gate formed on the substrate; an insulating layer covering the gate; an active layer formed on the insulating layer, the active layer comprising Indium gallium zinc oxide; source and drain formed on the active layer, the source and drain comprising gallium zinc oxide; passivation layer formed on the source and drain, the passivation layer is opened with a The hole; the pixel electrode is formed on the passivation layer, the pixel electrode is connected to the drain through the via hole, and the pixel electrode includes indium tin oxide. Indium gallium zinc oxide is used as the active layer, gallium zinc oxide is used as the source and drain electrodes, and indium tin oxide is used as the pixel electrode, which can reduce the contact barrier between the pixel electrode and the drain electrode, and the contact barrier between the source drain electrode and the drain electrode. Contact barrier between active layers, improving device performance.
Description
technical field [0001] The present application relates to the display field, in particular to a thin film transistor array substrate and a preparation method thereof. Background technique [0002] A thin film transistor (Thin Film Transistor, hereinafter referred to as TFT) array substrate is formed with a thin film transistor array, and the thin film transistor specifically includes a stacked gate, an insulating layer, an active layer, and a source and drain formed on the active layer. , wherein the gate is connected to the scan line, the source is connected to the data line, and the drain is connected to the pixel electrode. When the scan line provides a voltage for the gate, the thin film transistor is turned on, and the pixel electrode can be sequentially obtained through the drain and source. The voltage of the data line. However, due to the obvious leakage current of current thin film transistors and the low current-on-off ratio of thin film transistors, it is difficu...
Claims
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IPC IPC(8): H01L21/34H01L21/77H01L27/12H01L29/24H01L29/423H01L29/45
CPCH01L27/1225H01L27/1237H01L27/127H01L29/24H01L29/42384H01L29/45H01L29/66969
Inventor 孙松葛邦同
Owner BEIHAI HKC OPTOELECTRONICS TECH CO LTD