Driving overcurrent detection circuit
An overcurrent detection and circuit technology, applied in the field of circuits, can solve the problem of not being able to accurately judge whether the driving device is overcurrent, and achieve the effect of accurate judgment
Active Publication Date: 2019-07-19
SHANGHAI EASTSOFT MICROELECTRONICS
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] The invention solves the technical problem that it is impossible to accurately judge whether the driving device is over-current in the scheme of avoiding the over-current of the driving device
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0022] As mentioned above, the existing solutions for avoiding the overcurrent of the driving device cannot accurately determine whether the driving device is overcurrent without affecting the driving performance.
[0023] In the embodiment of the present invention, the gate of the first NMOS transistor and the gate of the driving transistor both input the same control signal, the source of the first NMOS transistor and the source of the driving transistor are both connected to the ground, and the drain of the first NMOS transistor A first impedance device is arranged between the drain of the driving tube. The first input terminal of the comparison circuit is coupled to the drain of the first NMOS transistor, and the input is the drain voltage of the first NMOS transistor, and the drain voltage of the first NMOS transistor is substantially the same as that input to the drain of the first NMOS transistor. The current is related to the current, that is, it is related to the curr...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a driving overcurrent detection circuit, comprising: a driving tube, a first NMOS transistor, a reference current source, a comparison circuit and a first impedance device, wherein an output end of the reference current source is coupled with a first end of the first impedance device and a drain electrode of the first NMOS transistor; the first end of the first impedance device is coupled with a first input end of the comparison circuit, and a second end of the first impedance device is coupled with a second input end of the comparison circuit; the comparison circuit isapplicable to comparing the current input by the first input end with the current input by the second input end and outputting a comparison result; a grid electrode of the driving tube inputs a control signal, a drain electrode of the driving tube is coupled with the second end of the first impedance device, the second end of the comparison circuit and the driving load, and a source electrode of the driving tube is grounded; and the drain electrode of the first NMOS transistor is coupled with the first end of the comparison circuit and the first end of the first impedance device, the grid electrode of the first NMOS transistor inputs a control signal, and the source electrode of the first NMOS transistor is coupled with the ground. By adoption of the above scheme, whether a driving membergenerates overcurrent can be accurately judged.
Description
technical field [0001] The invention relates to the field of circuits, in particular to a driving overcurrent detection circuit. Background technique [0002] When the driving device such as the driving tube is working, since the resistance of the driving tube itself is small, the current flowing through the driving tube is determined by the load coupled to the driving tube. When the load is small, or even the load is short-circuited, the current flowing through the drive tube is relatively large, and the drive tube is prone to overcurrent. When the drive tube is over-current, it will cause serious damage to the drive tube or the load. Therefore, it is necessary to limit the output current of the drive tube to avoid the occurrence of the above situation. [0003] In the prior art, in order to judge whether there is an overcurrent of the driving tube, one solution is to connect a resistor in series between the driving tube and the ground. Since the current flowing through ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): G01R19/165
CPCG01R19/16571
Inventor 关硕张旭陈光胜
Owner SHANGHAI EASTSOFT MICROELECTRONICS