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Method for forming three-dimensional memory and three-dimensional memory

A memory and three-dimensional technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve problems such as unsatisfactory crystallinity, and achieve the effect of improving electrical performance and crystallinity

Active Publication Date: 2019-07-19
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the prior art, the crystallinity of the channel layer deposited on the charge storage layer is only about 71.3%, which is not ideal.

Method used

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  • Method for forming three-dimensional memory and three-dimensional memory
  • Method for forming three-dimensional memory and three-dimensional memory
  • Method for forming three-dimensional memory and three-dimensional memory

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Embodiment Construction

[0021] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0022] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0023] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other st...

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Abstract

The invention provides a method of forming a three-dimensional memory. The method includes the following steps of: providing a semiconductor structure, wherein the semiconductor structure is providedwith a substrate, a stacked structure formed on the substrate, and a channel hole passing through the stacked structure; forming a charge storage layer in the channel hole, wherein the charge storagelayer includes a barrier layer, a charge trapping layer and a tunneling layer; removing organic impurities on the surface of the charge storage layer; and depositing an amorphous channel layer on thesurface of the charge storage layer after removal, and performing high-temperature annealing on the amorphous channel layer to form a crystal channel layer.

Description

technical field [0001] The invention relates to the field of three-dimensional memory, in particular to a method for forming a three-dimensional memory and the three-dimensional memory. Background technique [0002] In order to overcome the limitations of two-dimensional memory devices, memory devices with a three-dimensional (3D) structure have been developed and mass-produced in the industry, which improves integration density by three-dimensionally arranging memory cells on a substrate. [0003] In a three-dimensional memory device such as 3D NAND flash memory, the memory array may include a core region having a vertical channel structure. The vertical channel structure usually includes a charge storage layer and a channel layer. The charge storage layer includes a blocking layer, a charge trapping layer, and a tunneling layer. The channel layer is usually polysilicon. In order to ensure that the memory array has stable electrical performance, polysilicon is generally re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11582H01L27/1157H10B43/27H10B43/35
CPCH10B43/35H10B43/27
Inventor 李磊王秉国宋海李拓
Owner YANGTZE MEMORY TECH CO LTD