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Ray Image Sensor

A technology of radiographic imaging and image sensors, which is applied in semiconductor devices, electric solid devices, radiation control devices, etc., can solve the problems of limited sensitivity of radiographic imaging sensors and the inability to effectively reduce radiation intensity and radiation hazards

Active Publication Date: 2021-06-25
BRIGATES MICROELECTRONICS KUNSHAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the sensitivity of the radiation image sensor in the prior art is limited, so it is impossible to effectively reduce the radiation intensity and control the radiation hazard.

Method used

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Embodiment Construction

[0029] It can be seen from the background art that the radiation image sensors in the prior art often have the problem of low sensitivity.

[0030] In order to solve the technical problem, the present invention provides a radiographic image sensor, comprising:

[0031] a crystal layer, the crystal layer receives rays and converts the rays into convertible photons; a photoelectric conversion layer located in the vacuum cavity, the photoelectric conversion layer receives the convertible photons and performs photoelectric conversion on the convertible photons generating photoelectrons; an image sensor located in the vacuum chamber, the image sensor is set at a preset distance from the photoelectric conversion layer, and there is a DC electric field between the image sensor and the photoelectric conversion layer, and the DC electric field has a direct effect on the The photoelectrons are accelerated, and the image sensor collects the accelerated photoelectrons to obtain an image. ...

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Abstract

A radiation image sensor, comprising: a crystal layer, which receives rays and converts the rays into convertible photons; a photoelectric conversion layer located in a vacuum cavity, where the photoelectric conversion layer receives the convertible photons and converts The convertible photons undergo photoelectric conversion to generate photoelectrons; the image sensor located in the vacuum cavity is arranged opposite to the photoelectric conversion layer at a preset distance, and there is a direct current between the image sensor and the photoelectric conversion layer field, the DC electric field accelerates the photoelectrons, and the image sensor collects the accelerated photoelectrons to obtain an image. The technical solution of the present invention can effectively improve the sensitivity of the radiation image sensor, and can effectively reduce the radiation intensity of radiation and reduce the radiation hazard under the premise of obtaining the same image quality.

Description

technical field [0001] The invention relates to the field of optoelectronics, in particular to a radiation image sensor. Background technique [0002] With the advancement of technology, various ray images are more and more widely used, for example, they are widely used in various fields such as medical detection, safety detection, and material analysis. In the process of various radiographic image acquisition, ray radiation is indispensable. In view of the inherent danger and harmfulness of ray, it is hoped to reduce the intensity of ray radiation as much as possible. One of the methods to effectively reduce the intensity of radiation is to increase the sensitivity of the radiation image sensor as much as possible. [0003] However, the sensitivity of the radiation image sensor in the prior art is limited, so it cannot effectively reduce the radiation intensity and control the radiation hazard. Contents of the invention [0004] The problem to be solved by the present i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/1462H01L27/14663
Inventor 贺行政张文君庞昕
Owner BRIGATES MICROELECTRONICS KUNSHAN