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Method for producing semiconductor chips

一种制造方法、半导体的技术，应用在半导体/固态器件制造、半导体器件、制造工具等方向，能够解决芯片角缺损等问题，达到可靠除去、抑制不合格芯片的产生、抑制芯片成本的效果

Active Publication Date: 2019-07-30
FURUKAWA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to singulation during back grinding, chip corners may be chipped due to chip end faces colliding with adjacent chips.

Method used

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  • Method for producing semiconductor chips
  • Method for producing semiconductor chips
  • Method for producing semiconductor chips

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0057] A first embodiment of the production method of the present invention will be described with reference to FIGS. 1 to 5 . Semiconductor wafer 1 has on its surface S pattern surface 2 (refer to Figure 1A ). On the pattern surface 2 side of the semiconductor wafer 1, the mask-integrated surface protection tape 3 (refer to Figure 1B ). Thus, the semiconductor wafer 1 whose pattern surface 2 is covered with the mask-integrated surface protection tape 3 (refer to Figure 1C ).

[0058] The mask-integrated surface protection tape 3 is configured by further providing a mask material layer 3b on the adhesive layer 3ab of the surface protection tape 3a provided with the adhesive layer 3ab on the base film 3aa. That is, the mask-integrated surface protection tape 3 has a surface protection tape 3 a and a mask material layer 3 b provided on the surface protection tape 3 a. In addition, in the mask-integrated surface protection tape 3, each of the base film 3aa, the adhesive la...

no. 2 Embodiment approach

[0109] exist Figure 6A ~ Figure 6C The second embodiment shown differs from the first embodiment in that it includes irradiating the mask-integrated surface protection tape 3 with ultraviolet light before the step of peeling off the surface protection tape 3 a in the first embodiment. A step of curing the adhesive layer 3ab by radiation. Other steps are the same as those of the first embodiment.

[0110] That is, first, the mask-integrated surface protection tape 3 is pasted on the surface S side of the semiconductor wafer 1, and the wafer fixing tape 4 is pasted on the ground back side B side of the semiconductor wafer 1, and supported and fixed on the ring frame 13 ( refer to Figure 2C , Figure 6A ). Then, the mask-integrated surface protection tape 3 is irradiated with ultraviolet rays (UV19) from the surface S side (see Figure 6B ). Then, after the adhesive layer 3ab of the mask-integrated surface protection tape 3 is cured, the surface protection tape 3a is remo...

Embodiment 1

[0124] Using the mask-integrated surface protection tape 3 obtained above, a semiconductor wafer 1 is processed. As the remover 16 of the mask material layer 3b, methyl ethyl ketone (MEK) was sprayed.

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Abstract

A surface (S) side is irradiated with an SF6 gas plasma to etch a semiconductor wafer (1) which has been peeled off in street portions, and divide the semiconductor wafer into a plurality of individual semiconductor chips. A removing agent (16) is subsequently supplied from the surface (S) side. At that time, it is preferable that the semiconductor wafer 1 divided into the plurality of chips is rotated at high speed. Accordingly, a mask material layer (3b) remaining on the surface (S) is removed by the removing agent (16). Moreover, the removing agent (16) is preferably an organic solvent, andmore preferably, methyl ethyl ketone, ethanol, ethyl acetate, or a combination of these.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor chip. Background technique [0002] Recently, semiconductor chips have been significantly reduced in thickness and small in size. In particular, IC cards that incorporate semiconductor IC chips such as memory cards and smart cards are required to be thinner. In addition, small chips are required for LED / LCD drive devices, etc. change. In the future, as the demand for these devices increases, it is expected that the demand for thinner semiconductor chips and smaller chips will further increase. [0003] These semiconductor chips are obtained by thinning a semiconductor wafer to a predetermined thickness in a back grinding process or an etching process, and then dividing it into individual chips through a dicing process. In this dicing step, a blade dicing method of cutting with a dicing blade is used. In the blade dicing method, the cutting resistance received by the blade is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/301C09J201/00H01L21/304
CPCC09J201/00H01L21/6836H01L2221/68327H01L2221/6834H01L2221/68381H01L21/78H01L21/3081H01L21/31133H01L21/02041H01L21/304H01L21/3065H01L21/67092H01L21/67132H01L21/68764H01L21/76B23K26/38H01L21/3086H01L2221/68386
Inventor 内山具朗阿久津晃横井启时
Owner FURUKAWA ELECTRIC CO LTD
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