Junction barrier Schottky diode capable of inhibiting local electromigration phenomenon
A Schottky diode and electromigration technology, which is applied in circuits, electrical components, semiconductor devices, etc., can solve problems affecting the reliability of JBS diodes, different heat dissipation conditions, and different carrier mobility, so as to suppress local electromigration phenomenon, reducing temperature differences, and improving performance and reliability
Inactive Publication Date: 2019-08-09
XIDIAN UNIV
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Problems solved by technology
[0004] However, due to the different package areas in contact with different positions of the JBS diode, the heat dissipation conditions at different positions of the JBS diode are different, and eventually the center temperature of the JBS diode is greater than the temperature of its surrounding area, and this temperature difference will lead to carrier mobility at different positions of the JBS diode. Different, the current distribution is uneven, and the JBS diode has local electromigration, which affects the reliability of the JBS diode
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Embodiment 1
[0025] See figure 1 , figure 1 It is a schematic structural diagram of a junction barrier Schottky diode capable of suppressing local electromigration phenomenon provided by an embodiment of the present invention. This embodiment provides a junction barrier Schottky diode capable of suppressing local electromigration phenomenon. The junction barrier Schottky diode includes:
[0026] N- epitaxial layer 3;
[0027] A number of the P-type ion implantation regions 4 are arranged in the N- epitaxial layer 3 at intervals, and the interval between two adjacent P-type ion implantation regions 4 is from the junction barrier Schottky diode From the edge to the center, gradually decrease according to the first trend or the second trend;
[0028] The first metal layer 6 is located on the upper surface of the N- epitaxial layer 3, and the interface between the P-type ion implantation region 4 and the first metal layer 6 is Schottky contact or ohmic contact, and the N- The interface between the ...
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The invention discloses a junction barrier Schottky diode capable of inhibiting a local electromigration phenomenon. The junction barrier Schottky diode comprises: an N- epitaxial layer; a plurality of P-type ion implantation regions arranged in the N- epitaxial layer at intervals, wherein the interval between each two adjacent P-type ion implantation regions is gradually decreased from the edge of the junction barrier Schottky diode to the center of the junction barrier Schottky diode according to a first trend or a second trend; and a first metal layer located at the upper surface of the N-epitaxial layer, wherein the interface of the P-type ion implantation regions and the first metal and the interface of the N- epitaxial layer and the first metal layer are Schottky contact. The interval between each two adjacent P-type ion implantation regions of the junction barrier Schottky diode is gradually decreased from the edge of the junction barrier Schottky diode to the center of the junction barrier Schottky diode so as to reduce the temperature difference of the junction barrier Schottky diode on the premise of ensuing that the reverse leakage current and the forward on-resistanceare not degraded, and the phenomenon of local electromigration is effectively inhibited.
Description
Technical field [0001] The invention belongs to the field of semiconductor technology, and specifically relates to a junction barrier Schottky diode capable of suppressing local electromigration. Background technique [0002] Wide band gap semiconductor material silicon carbide has a large forbidden band width, high critical breakdown electric field, high thermal conductivity and high electron saturation drift speed and other excellent physical and chemical properties, suitable for high temperature, high pressure, high power, and radiation resistance Of semiconductor devices. [0003] In the field of power electronics, JBS diodes (Junction Barrier Schottky Diode) have been widely used, and they have good forward conduction characteristics and low reverse leakage current. [0004] However, due to the different packaging areas contacted by different positions of the JBS diode, the heat dissipation conditions of the different positions of the JBS diode are different, and finally the ce...
Claims
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Login to View More IPC IPC(8): H01L29/872H01L29/06
CPCH01L29/0603H01L29/0684H01L29/872
Inventor 汤晓燕范鑫宋庆文袁昊何晓宁张玉明张艺蒙
Owner XIDIAN UNIV