Dry slotting method for back contact battery
A technology of back-contact battery and slotting method, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve problems such as crystal structure damage, high production line fragmentation rate, affecting battery performance, etc.
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[0023] The back contact battery of the present invention uses the dry groove method, and it comprises the steps:
[0024] 1) Phosphorus diffusion is carried out on the treated silicon wafer;
[0025] 2) Print a polymer protective coating on the N+ area that does not need to be etched;
[0026] 3) Use deep reactive ion etching to continuously passivate and etch the non-protected area, optimize parameters, and obtain an etching profile with a specific sidewall angle and depth;
[0027] 4) Carry out boron diffusion to the silicon wafer to obtain the P+ region;
[0028] 5) Etching is performed to remove the remaining polymer protective coating, phosphosilicate glass and borosilicate glass;
[0029] 6) Plating a reflective passivation layer and printing electrodes.
[0030] In this embodiment, the silicon wafer is any one of P-type monocrystalline silicon, P-type polycrystalline silicon, N-type monocrystalline silicon, and N-type polycrystalline silicon.
[0031] In this embodi...
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