Unlock instant, AI-driven research and patent intelligence for your innovation.

Dry slotting method for back contact battery

A technology of back-contact battery and slotting method, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve problems such as crystal structure damage, high production line fragmentation rate, affecting battery performance, etc.

Inactive Publication Date: 2019-08-09
SPIC XIAN SOLAR POWER CO LTD +3
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, laser grooves on the back are likely to cause damage to the crystal structure, and rear passivated crystalline silicon cells are prone to warping due to the difference in the front and back metal structures. high
In addition, excessive laser damage to the cell will cause a decrease in the open circuit voltage and affect the final performance of the cell.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0023] The back contact battery of the present invention uses the dry groove method, and it comprises the steps:

[0024] 1) Phosphorus diffusion is carried out on the treated silicon wafer;

[0025] 2) Print a polymer protective coating on the N+ area that does not need to be etched;

[0026] 3) Use deep reactive ion etching to continuously passivate and etch the non-protected area, optimize parameters, and obtain an etching profile with a specific sidewall angle and depth;

[0027] 4) Carry out boron diffusion to the silicon wafer to obtain the P+ region;

[0028] 5) Etching is performed to remove the remaining polymer protective coating, phosphosilicate glass and borosilicate glass;

[0029] 6) Plating a reflective passivation layer and printing electrodes.

[0030] In this embodiment, the silicon wafer is any one of P-type monocrystalline silicon, P-type polycrystalline silicon, N-type monocrystalline silicon, and N-type polycrystalline silicon.

[0031] In this embodi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a dry slotting method for a back contact battery. The method comprises steps that 1), a treated silicon wafer is subjected to phosphorus diffusion; 2), a layer of polymeric protective coating is printed on an N+ region requiring no etching; 3), continuous passivation and etching of a non-protected region are performed through deep reactive ion etching, parameters are optimized, and an etched profile with a particular sidewall angle and the depth is obtained; 4), boron diffusion of the silicon wafer is performed to obtain a P+ region; 5), etching is performed to remove the remaining polymer protective coating, phosphosilicate glass and borosilicate glass; and 6), a reflective passivation layer is plated, and electrodes are printed. Compared with the prior art, a deep-reaction ion etching machine manufactured by MEMS is utilized for etching and slotting, the etched profile with the particular sidewall angle and the depth is obtained, damage to a crystalline silicon substrate is greatly reduced, battery filling factors are improved, a high performance high performance crystalline silicon battery is obtained, and purposes are achieved.

Description

technical field [0001] The invention relates to a solar cell slotting method, in particular to a dry slotting method for a back contact cell suitable for solar cell slotting. Background technique [0002] Energy and the environment are two major issues facing the 21st century. According to expert estimates, at the current rate of energy consumption, exploitable oil resources will be exhausted in a few decades, and coal resources can only supply about 200 million yuan for human use. year. As a renewable and non-polluting energy source, solar cells can solve the two major problems of energy and environment at the same time, and have broad development prospects. From the perspective of conversion efficiency and source of materials, the focus of future development of the photovoltaic industry is still crystalline silicon solar cells. [0003] Cost reduction and efficiency increase have always been the eternal theme of the photovoltaic industry. With the industry's continuous t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18H01L31/0352
CPCH01L31/035281H01L31/1804H01L31/1868Y02P70/50
Inventor 席珍珍
Owner SPIC XIAN SOLAR POWER CO LTD