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A data transmission method, device and circuit of nand FLASH

A data transmission method and a technology of a data transmission circuit, which are applied in the field of data transmission circuits of NAND FLASH, and can solve problems such as slow data transmission speed

Active Publication Date: 2021-05-18
HEFEI GEYI INTEGRATED CIRCUIT CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above problems, the purpose of the embodiments of the present invention is to provide a data transmission method of NAND FLASH, a data transmission device of NAND FLASH and a data transmission circuit of NAND FLASH, to solve the problems in the NAND FLASH storage array in the prior art. The data transmission method has the problem of slow data transmission speed

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  • A data transmission method, device and circuit of nand FLASH
  • A data transmission method, device and circuit of nand FLASH
  • A data transmission method, device and circuit of nand FLASH

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Embodiment Construction

[0034] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0035] refer to figure 2 , which shows a flow chart of the steps of a NAND FLASH data transmission method embodiment of the present invention, specifically may include the following steps:

[0036] S1, read the data in the NAND FLASH to the corresponding PDL.

[0037] Usually, step S1 reads the data of a page in the NAND FLASH into the corresponding PDL.

[0038] S2, precharge the 2K local buses and 2 transmission buses corresponding to the PDL to a high level; wherein, each transmission bus is respectively connected to the K local buses through K switch tubes, and each local bus is respectively It is connected with an output end of M / K transmission pair tubes.

[0039]That is, the transmission bus is connected to K switch tub...

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Abstract

The embodiment of the present invention provides a data transmission method, device and circuit of NAND FLASH. The method includes: reading the data in the NAND FLASH into the corresponding PDL; The pre-charging is at a high level; wherein, each transmission bus is respectively connected to K local buses through K switch tubes in one-to-one correspondence, and each local bus is connected to an output end of M / K transmission pair tubes respectively; according to translation The code address turns on the transmission pair tube and the switch tube that need to be transmitted; the value of the transmitted data is determined according to the differential voltage on the transmission bus. The embodiment of the present invention can greatly improve the data transmission speed of the NAND FLASH, and can effectively reduce the data transmission power consumption of the NAND FLASH at the same time.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a NAND FLASH data transmission method, a NAND FLASH data transmission device and a NAND FLASH data transmission circuit. Background technique [0002] In the prior art, the transmission method of data in the NAND FLASH (flash memory) storage array is: read the data of a page (page) earlier, and data is latched in PDL (Page Data Latch, page data latch), after that According to the length of each byte (byte) / word (word), pass figure 1 The circuit sends the data to the transmission bus (Q' / QB') in sequence, and finally sends it to the I / O (Input / Output, input / output) interface. [0003] The data transmission method in the NAND FLASH storage array in the prior art has the following defects: usually, the data in the PDL is transmitted to the Q' / QB' transmission bus by pre-charging and evaluating the Q' / QB' transmission bus. But for large-capacity NAND FLASH storage arrays, figure 1 ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C8/06G11C8/12G11C16/08G06F13/16
CPCG06F13/1668G11C8/06G11C8/12G11C16/08Y02D10/00
Inventor 束庆冉刘会娟
Owner HEFEI GEYI INTEGRATED CIRCUIT CO LTD
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