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Method for preparing additive silicon pyrophosphate for semiconductor doping phosphorus diffusion source

A silicon pyrophosphate and phosphorus-doped technology, which is applied in the field of silicon pyrophosphate preparation, can solve the problem that silicon pyrophosphate is difficult to ensure the purity of silicon pyrophosphate, and the content of metal impurities in silicon pyrophosphate cannot meet the technical index requirements of semiconductor doped phosphorus diffusion source and other problems, to achieve the effect of good dissolution, high yield and good effect

Active Publication Date: 2019-08-30
刘鹏
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the technical problems that the existing silicon pyrophosphate preparation method is difficult to ensure the purity of silicon pyrophosphate, and the metal impurity content in the obtained silicon pyrophosphate cannot meet the technical index requirements of the semiconductor doped phosphorus diffusion source, the present invention provides a semiconductor doped phosphorus diffusion source. Preparation method of additive silicon pyrophosphate for heterophosphorous diffusion source

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  • Method for preparing additive silicon pyrophosphate for semiconductor doping phosphorus diffusion source
  • Method for preparing additive silicon pyrophosphate for semiconductor doping phosphorus diffusion source
  • Method for preparing additive silicon pyrophosphate for semiconductor doping phosphorus diffusion source

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Embodiment 1

[0044] Preparation method of additive silicon pyrophosphate used for semiconductor doped phosphorus diffusion source:

[0045] Step 1, purifying silica raw material:

[0046] 1.1) Take the silica raw material with a purity of ≥99.95% and a particle size of 800 meshes, put it in a polytetrafluoroethylene reactor, add water: hydrofluoric acid: nitric acid at a volume ratio of 11:2:1, stir evenly, and heat up to 70°C, heat preservation reaction for 3 hours, put it in a centrifuge for liquid-solid separation, spin and wash the washing water until the pH value of the mother liquor is 6.8;

[0047] 1.2) Put the above-mentioned purified and dried silica into the PTFE reactor, add water: hydrofluoric acid: sulfuric acid at a volume ratio of 11:2:1, mix well, heat up to 70°C, and keep it warm for 4 hours Finally, put into the centrifuge and dry, and the mother liquor separated by washing during the drying process is 6.8 to pH;

[0048] 1.3) Take a sample from the dried silica, and dete...

Embodiment 2

[0058] Preparation method of additive silicon pyrophosphate used for semiconductor doped phosphorus diffusion source:

[0059] Step 1, purifying silica raw material:

[0060] 1.1) Take the silicon dioxide raw material with a purity of ≥99.95% and a particle size of 1000 mesh, place it in a polytetrafluoroethylene reactor, add water: hydrofluoric acid: nitric acid at a volume ratio of 12:1.5:0.8, stir evenly, and heat up to 75°C, after 3 hours of heat preservation, put it into a centrifuge for liquid-solid separation, and spin and wash the washing water until the pH value of the mother liquor is 7.2;

[0061] 1.2) Put the above-mentioned purified and dried silica into the PTFE reactor, add water: hydrofluoric acid: sulfuric acid with a volume ratio of 15:6:2.3, mix well, heat up to 75°C, and keep it warm for 4 hours Finally, put it into a centrifuge to dry, and the mother liquor separated by washing during the drying process is 7.2 to a pH;

[0062] 1.3) Take a sample from th...

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Abstract

Aiming at solving technical problems that a conventional silicon pyrophosphate preparation method is hard to ensure the purity of silicon pyrophosphate, and the metal impurity content of the obtainedsilicon pyrophosphate cannot meet technical index requirements of a semiconductor doping phosphorus diffusion source, the invention discloses a method for preparing an additive silicon pyrophosphate for a semiconductor doping phosphorus diffusion source. The method comprises the following steps: purifying a silica raw material; 2, synthesizing alkali silica sol mSiO2*nH2O, wherein m is less than n; and 3, synthesizing the silicon pyrophosphate. The purity of the silicon pyrophosphate prepared by using the method is as high as 99.995-99.999%, contents of metal elements Fe, Cu, Ni, Cr, Co, Mn, Ti, V and Pb are all 0.5ppm or less, and preparation requirements of the semiconductor doping phosphorus diffusion source can be met.

Description

technical field [0001] The present invention relates to a kind of silicon pyrophosphate (S i P 2 o 7 ), especially relates to a method for preparing high-purity silicon pyrophosphate used as a semiconductor-doped phosphorus diffusion source. Background technique [0002] At present, the production of silicon pyrophosphate is mainly to produce amorphous silica powder into silica hydroxide sol, and combine silica hydroxide sol with phosphoric acid (H 3 PO 4 ) reaction to produce silicon hydrogen phosphate (Si(HPO 4 ) 2 ), and then calcined silicon hydrogen phosphate to lose water to obtain silicon pyrophosphate. The chemical reaction formula is as follows: [0003] [0004] [0005] In the process of producing silicon pyrophosphate by the above method, when the silicon hydroxide sol is dissolved in phosphoric acid, different crystal forms or variants will appear, so that there are mixtures of various variants in the obtained silicon pyrophosphate, and these mixture...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/00C01B25/42
CPCC01B25/42C01B33/00C01P2006/80
Inventor 刘鹏王江哲俞小瑞刘明钢
Owner 刘鹏