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Alkali etching process of SE solar cell

A technology of solar cells and alkali etching, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of damage, corrosion, short-circuit current, open-circuit voltage and low fill factor in laser grooved areas, and achieve the effect of avoiding corrosion

Inactive Publication Date: 2019-08-30
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the SE (Selective Emitter) solar cell manufacturing process, in order to re-dope the metal grid line (electrode) and the silicon wafer, it is necessary to use laser equipment to re-groove the crystalline silicon diffusion sheet according to the grid line pattern. However, during the laser scanning process, the PSG in the laser grooved area will be destroyed. In the subsequent alkali etching, the damaged PSG is not enough to protect the laser grooved area, and the laser grooved area will be corroded by the alkali etching solution. resulting in low short circuit current, open circuit voltage and fill factor

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A kind of alkali etching process of SE solar cell, comprises the steps:

[0027] 1) Diffusion;

[0028] 2) Laser doping;

[0029] 3) Use an oxidizing solution to wet-oxidize the front of the silicon wafer to form an oxide layer on the front of the silicon wafer; the oxidizing solution contains an oxidizing agent and a catalyst; the mass percentage of the oxidizing agent in the oxidizing solution is 2% to 5%; The mass percentage of the catalyst in the liquid is 0.3% to 1%; the oxidizing agent is selected from one or more of peracetic acid, performic acid, chromium trioxide, and hydrogen peroxide; the catalyst is selected from manganese dioxide, hydrogen peroxide One or more of sodium, potassium hydroxide, aluminum oxide, and iron powder; the temperature of the wet oxidation is 20-70°C, and the time is 0.5-3min; the thickness of the oxide layer is 2-20nm;

[0030] 4) Remove the PSG on the back of the silicon wafer;

[0031] 5) Alkali etching.

[0032] The wet oxidatio...

Embodiment 2

[0035] On the basis of embodiment 1, the difference is:

[0036] After step 5), the following steps are also included:

[0037] 6) Remove the PSG on the front side of the silicon wafer;

[0038] 7) Wash and dry.

[0039] In Example 2, the PSG on the front side of the silicon wafer is further removed, washed and dried, so that the silicon wafer can be processed subsequently.

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PUM

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Abstract

The invention provides an alkali etching process of an SE (Selective Emitter) solar cell. The alkali etching process comprises the following steps of: 1) performing diffusion; 2) performing laser doping; 3) performing wet oxidation for the front surface of a silicon wafer by employing an oxidizing solution to generate an oxide layer on the front surface of the silicon wafer; 4) removing a PSG on the back surface of the silicon wafer; 5) performing alkali etching; 6) removing the PSG at the front surface of the silicon wafer; and 7) performing cleaning and drying. After laser doping and beforethe removal of the PSG at the back surface of the silicon wafer, the oxidation layer is generated at the front surface of the silicon wafer, wherein the oxidation layer can protect the laser slottingarea in the alkali etching process to prevent the laser slotting area from being corroded by an alkali etching solution.

Description

technical field [0001] The invention relates to an alkali etching process for SE solar cells. Background technique [0002] In the SE (Selective Emitter) solar cell manufacturing process, in order to re-dope the metal grid line (electrode) and the silicon wafer, it is necessary to use laser equipment to re-groove the crystalline silicon diffusion sheet according to the grid line pattern. However, during the laser scanning process, the PSG in the laser grooved area will be destroyed. In the subsequent alkali etching, the damaged PSG is not enough to protect the laser grooved area, and the laser grooved area will be corroded by the alkali etching solution. As a result, the short-circuit current, open-circuit voltage and fill factor are all low. Contents of the invention [0003] The object of the present invention is to provide an alkaline etching process for SE solar cells, which generates an oxide layer on the front side of the silicon wafer after laser doping and before ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306H01L31/0224H01L31/18
CPCH01L21/30604H01L31/022433H01L31/18Y02E10/50Y02P70/50
Inventor 张益荣邓雨微王思云鲍得友马洁罗飞
Owner CHANGZHOU SHICHUANG ENERGY CO LTD