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Method for preparing large-area regular-distribution gold nanoparticle array in template annealing mode

A gold nanoparticle, large-area technology, applied in the field of preparation of gold nanoparticle arrays, can solve the problems of processing nanostructures, generating surfaces, and high cost of use, and achieve the effects of small quasi-three-dimensional structure, small particle size and particle spacing

Inactive Publication Date: 2019-09-06
HENAN NORMAL UNIV
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  • Application Information

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Problems solved by technology

Although these top-down lithography techniques have high resolution and repeatability, they are costly and complex to use, making it difficult to process nanostructures on large-area flexible substrates.
These photolithographic techniques are also not suitable for the preparation of three-dimensional structures, and the processing tends to generate surface roughness, leading to scattering loss

Method used

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  • Method for preparing large-area regular-distribution gold nanoparticle array in template annealing mode
  • Method for preparing large-area regular-distribution gold nanoparticle array in template annealing mode

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Embodiment

[0029] Step S1: Take 2cm*2cm high-purity aluminum flakes, wash them in ethanol, acetone and ion aqueous solution for 5 minutes with an ultrasonic cleaner, and then dry them in a nitrogen environment, and then use a 4:1 volume ratio filter. A mixture of chloric acid and ethanol is used as an electrochemical polishing solution to polish the upper and lower surfaces of the aluminum flakes, where the voltage of the polishing solution is 20V and the temperature is 10°C;

[0030] Step S2: The polished aluminum flakes are first anodized in a 1wt% phosphoric acid solution at a voltage of 195V and a temperature of 4°C for 6 hours. At this point, a sacrificial layer will be formed on the surface, and then 6wt. Chemically remove the sacrificial layer with a mixture of% phosphoric acid and chromic acid at 70°C for 9 hours, and then perform a second anodic oxidation treatment in a 1wt% phosphoric acid solution at a voltage of 195V and a temperature of 4°C to form an aluminum oxide template 1; ...

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Abstract

The invention discloses a method for preparing a large-area regular-distribution gold nanoparticle array in a template annealing mode. The method comprises the steps that an ultra-thin ordered aluminum oxide template is prepared on an aluminum thin sheet by adopting a two-step anodic oxidation treatment method and transferred to a silicon substrate; gold film is deposited on the aluminum oxide template through electronic beam evaporation; and the aluminum oxide template with the gold film deposited is placed into a sample furnace and subjected to vacuum heating until the temperature reaches 500 DEG C, then template annealing treatment is performed, and through annealing, the ordered gold nanoparticle array with the dehumidified metal film and good fission component dispersibility can be produced. According to the method provided by the invention, the instability of fluid is utilized for forming the gold nanoparticle array on the aluminum oxide template in a self-assembling mode, and bycontrolling the metal film annealing dehumidification process, large-area photon structures can be prepared on soft and hard substrates.

Description

Technical field [0001] The invention belongs to the technical field of preparation of gold nanoparticle arrays, and specifically relates to a method for preparing a large area and regularly arranged gold nanoparticle array by template annealing. Background technique [0002] Optical metasurfaces can not only modulate electromagnetic waves on the sub-micron scale, but also tailor the localization of electromagnetic waves. These features open up a whole new range of applications for ultra-thin optics, photonic circuits, imaging, sensing, and nonlinear optics. the way. Modern optical devices require nanostructures of various sizes, shapes, and spatial distributions, or large-area precise assembly of these structures on soft and hard substrates. Such strict requirements are difficult for traditional photolithography or self-assembly methods to achieve. [0003] As a traditional way, such as focused ion beam lithography system and electron beam lithography system. Although these top-...

Claims

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Application Information

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IPC IPC(8): C23C14/18C23C14/30C23C14/58C23C14/04C25D11/04B82Y40/00
CPCB82Y40/00C23C14/042C23C14/18C23C14/30C23C14/5806C25D11/045
Inventor 李丽霞宗雪阳包佳宇刘玉芳
Owner HENAN NORMAL UNIV