A Junction Barrier Schottky Diode Capable of Reducing Reverse Leakage Current

Abstract

The invention discloses a junction type barrier Schottky diode capable of reducing a reverse leakage current. The junction type barrier Schottky diode comprises an N+ substrate layer, an N- epitaxiallayer, a plurality of P-type ion implantation regions, two silicon dioxide isolation layers, a first metal layer and a second metal layer, wherein a groove is formed in the center of the surface of each P-type ion implantation region, and the depth of each groove is gradually increased from the center of the junction type barrier Schottky diode to the edge; the N- epitaxial layer between every twoadjacent P-type ion implantation regions, and the first metal layer form a first Schottky contact region; and the area of the first Schottky contact area is gradually enlarged from the center of thejunction barrier Schottky diode to the edge. On the premise that the junction type barrier Schottky diode can ensure that the reverse leakage current and forward on resistance are not degraded, the temperature difference between the center and the edge of the junction type barrier Schottky diode is reduced, so that the phenomenon of local electromigration is effectively inhibited, and the reverseleakage current of the junction type barrier Schottky diode is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a junction barrier Schottky diode capable of reducing reverse leakage current. Background technique [0002] Silicon carbide, a wide bandgap semiconductor material, has excellent physical and chemical properties such as large bandgap width, high critical breakdown electric field, high thermal conductivity and high electron saturation drift velocity, and is suitable for high temperature, high pressure, high power, and radiation resistance semiconductor devices. In the field of power electronics, JBS (Junction barrier schottky diode, Junction barrier Schottky diode) diodes have been widely used, which have the characteristics of good forward conduction characteristics and small reverse leakage current. [0003] Compared with the traditional junction barrier Schottky diode, the trench junction barrier Schottky diode (TJBS, TrenchJunction barrier schottky diode) r...

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Problems solved by technology

[0004] However, due to the different package areas contacted by different positions of the TJBS diode, the heat dissipation conditions of different positions of the TJBS diode are different, and finally the temperature at the center of the TJBS diode is greater than the temperature around the TJBS diode.

This temperature difference will lead to different carrier mobility in different positions of the TJBS diode, uneven current distribution, and local electromigration phenomenon in the TJBS diode, which will affect the reliability of the device.

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