Preparation method of sliced solar cell piece
A technology for solar cells and solar cells, applied in the field of solar cells, can solve the problems of increased stress, large thickness and short circuit of solar cell modules, and achieve the effects of improving photoelectric conversion efficiency, small damage and reducing module stress.
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[0057] figure 2 The preparation method of the shown crystalline silicon solar cell mainly includes the following steps:
[0058] Step 1, cleaning the velvet.
[0059] The silicon substrate 1 is cleaned, and the front side of the silicon substrate 1 is textured.
[0060] Step 2, forming an emitter layer 2 .
[0061] The front side of the silicon substrate 1 is doped by means of diffusion, ion implantation, etc. to form an emitter layer 2 .
[0062] Step 3, etching and removing phosphorus (borosilicate) glass.
[0063] Step 4, forming the front anti-reflection passivation layer 3 and the back passivation layer 5 .
[0064] A front anti-reflection passivation layer 3 is formed on the emitter layer 2 , and a rear passivation layer 5 is formed on the back of the silicon substrate 1 .
[0065] Step 5, printing electrode paste.
[0066] The front electrode paste is printed on the front anti-reflection passivation layer 3, and the back electrode paste is printed on the back pas...
Embodiment 1
[0092] This embodiment provides a method for preparing a sliced solar cell sheet with notches on the edge and a solar cell module prepared by using the obtained sliced solar cell sheet.
[0093] In this embodiment, a sliced solar cell 200 with a notch on the edge is prepared by cutting a 5BB (5 busbar) whole solar cell 100 with 5 elliptical through holes X, and the specific steps are as follows:
[0094] Step 101 , laser drilling is performed on a chamfered P-type single crystal silicon wafer with a size of 158.75mm×158.75mm.
[0095] like Image 6 As shown, the through hole X is elliptical, and the number is 5. The length L of the through hole X is 2 mm to 4 mm, and the width W of the through hole X is 1 mm to 3 mm. One through hole X corresponds to one busbar line, and 5 The center of the via hole X is located on the same straight line perpendicular to the busbar and in the middle of the busbar.
[0096] Step 102, cleaning the silicon wafer, and making texture on the...
Embodiment 2
[0106] This embodiment provides a method for preparing a sliced solar cell sheet with notches on the edge and a solar cell module prepared by using the obtained sliced solar cell sheet.
[0107] In this embodiment, a sliced solar cell with a notch on the edge is prepared by cutting a 5BB (5 busbar) whole solar cell with 5 elliptical through holes, and the specific steps are as follows:
[0108] Step 201 , laser drilling is performed on a chamfered P-type single crystal silicon wafer with a size of 158.75mm×158.75mm.
[0109] like Image 6 As shown, the through hole X is elliptical, and the number is 5. The length L of the through hole X is 2 mm to 4 mm, and the width W of the through hole X is 2 mm to 6 mm. One through hole X corresponds to one busbar line, and 5 The center of the via hole X is located on the same straight line perpendicular to the busbar and in the middle of the busbar.
[0110] Step 202, cleaning the silicon wafer, and making texture on the front sid...
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