Bottom emitting type VCSEL chip and manufacturing method thereof

Abstract

The invention relates to the technical field of laser chips, in particular to a bottom emitting type VCSEL chip and a manufacturing method thereof. The VCSEL chip comprises a GaAs substrate and an epitaxial structure located on one side of the GaAs substrate; a light emitting hole is etched in the bottom of the GaAs substrate; an N-contact layer is evaporated on the periphery of the light emitting hole in the GaAs substrate; the epitaxial structure comprises an N-DBR structure, an oxide layer, a quantum well, a P-DBR structure and an ohmic contact layer; the ohmic contact layer, the P-DBR structure, the quantum well and AlGaAs are etched to the upper surface of the DBR structure to form a mesa; the ohmic contact layer corresponds to the light emitting hole in position; an ODR layer grows on the ohmic contact layer; a mirror surface layer is evaporated on the ODR layer; the mirror surface layer on the mesa is covered with an SiNx layer; a contact hole is etched in a position, corresponding to the light emitting hole, of the SiNx layer on the mirror surface layer; the SiNx layer is coated with a P-contact layer; and the P-contact layer fills the contact hole. The structure design of the VCSEL chip does not influence a photoluminescence test, so that the test efficiency is improved, the subsequent rejection rate is reduced, and the waste of raw materials is reduced.

Description

technical field [0001] The invention relates to the technical field of laser chips, in particular to a bottom-emitting VCSEL chip and a manufacturing method thereof. Background technique [0002] VCSEL is the abbreviation of vertical-cavity surface-emitting laser, which refers to the vertical-cavity surface-emitting laser. Abbreviated as DBR), the laser is emitted vertically along the epitaxial growth direction of the material. Compared with edge emitting laser (Edge Emitting Laser, EEL for short), VCSEL has a circular spot, easy to couple with optical fiber, complete process manufacturing and detection without dissociation, easy to realize large-scale array and optoelectronic integration and other advantages. [0003] Generally, bottom-emitting VCSEL epitaxial DBR will grow into P-DBR with more logarithms than N-DBR, so that the reflectivity of P-DBR is higher than that of N-DBR. It cannot normally pass through the DBR layer to the quantum well, so that effective PL (phot...

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Problems solved by technology

[0003] Generally, bottom-emitting VCSEL epitaxial DBR will grow into P-DBR with more logarithms than N-DBR, so that the reflectivity of P-DBR is higher than that of N-DBR. It cannot pass through the DBR layer to the quantum well normally, so that effective PL (photoluminescence) testing cannot be performed

If the PL test cannot be performed, it is impossible to confirm whether the epitaxial parameters meet the requirements of subsequent operations. In production, the epitaxial parameters can only be confirmed after the epitaxial wafers are made into chips. It cannot be solved in time, so the scrap rate will remain high, which greatly wastes raw materials and increases production costs

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