A simplified epitaxial flip-chip vcsel chip and its manufacturing method

Abstract

The invention relates to the technical field of electronic chips, and discloses a reduced epitaxial flip-chip VCSEL chip and a manufacturing method thereof. The VCSEL chip comprises a quantum well, a first transition layer and a second transition layer, wherein a first ohmic contact layer grows on the first transition layer; a first ODR column grows on the first ohmic contact layer; vacuum evaporation of a mirror layer on the first ODR column is carried out; a SiO2 protective layer grows on the side wall of the mirror layer; vacuum evaporation of an epitaxial wafer bonding layer on the mirror layer is carried out; a Si wafer is arranged on the epitaxial wafer bonding layer; vacuum evaporation of metal on the Si wafer is carried out to form P-contact; a second ohmic contact layer grows on the second transition layer; a second ODR column grows on the second ohmic contact layer; vacuum evaporation of metal on the second ODR column is carried out to form N-contact; and the upper surface of the second ODR column is provided with a light-emitting hole by N-contact. An oxidation process which is difficult to control does not exist in the manufacturing method, the N-contact in the chip is directly connected to the epitaxial wafer, the portion requiring heat dissipation is reduced, the power efficiency and the slope efficiency are improved, ITO makes current expansion more uniform, and generation of a transverse mode is reduced.

Description

technical field [0001] The invention relates to the technical field of electronic chips, in particular to a simplified epitaxial flip-chip VCSEL chip and a manufacturing method thereof. Background technique [0002] The full name of VCSEL is Vertical Cavity Surface Emitting Laser, referred to as surface-emitting laser. Unlike traditional edge-emitting lasers, the laser emission direction of VCSEL is perpendicular to the substrate surface, and a circular spot can be obtained. Because the resonant cavity length is close to the wavelength, the dynamic single-mode performance is relatively good, it has high luminous efficiency, extremely low power consumption, good beam quality, easy fiber coupling, adjustable frequency up to several GHz, ultra-narrow linewidth, extremely The advantages of high beam quality, high polarization ratio and low cost. [0003] In the process of VCSEL preparation, the probability of crystal defects caused by stress and manufacturing process is much hi...

AI Technical Summary

Problems solved by technology

At present, all VCSELs need to grow the DBR layer and oxide layer during epitaxial preparation, and the oxidation of the oxide layer is a difficult operation at the chip end, which is a difficult process to control.

DBR growth has high requirements for epitaxy, and oxidation control is difficult. Conventional VCSEL chip design or process is not "perfect", resulting in local crystal defects, which are difficult to detect by conventional shipment testing; but in the process of chip work, crystal defects Under the stimulation of high temperature, high current and strong photons, the growth will be accelerated. After a period of time, once the rupture growth exceeds a certain value or reaches the active area, the chip will fail.

Images