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Metal nanowire thin film and its preparation method and thin film transistor array

A metal nanowire and film technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of increased haze of conductive film finished products, limited application scope, etc., to achieve low cost, The effect of easy size control and excellent performance

Active Publication Date: 2022-01-07
BEIHAI HKC OPTOELECTRONICS TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the nano-scale effect of the nano-wire conductive film of the conductive layer composition nanowire, as the amount of silver wire increases, the haze of the finished conductive film increases, and there is no such thing as an ITO conductive film for etching lines. The etching pattern is more obvious due to the disappearing layer material, which limits its application range

Method used

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  • Metal nanowire thin film and its preparation method and thin film transistor array
  • Metal nanowire thin film and its preparation method and thin film transistor array
  • Metal nanowire thin film and its preparation method and thin film transistor array

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preparation example Construction

[0034] The present invention proposes a method for preparing a metal nanowire film, please refer to figure 1 , the preparation method comprises the following steps:

[0035] Step S10, using the aluminum substrate as the base material, and preparing a porous anodized aluminum template by anodic oxidation method;

[0036] Step S20, using the porous anodized alumina template as the cathode and the inert electrode as the anode, performing electrochemical deposition in an electrochemical deposition solution containing metal ions to obtain an alumina template deposited with metal nanowires, and using a template remover to remove the oxidation Aluminum template to obtain metal nanowires;

[0037] Step S30, rinsing the metal nanowires with water and alcohol solution, and dispersing the rinsed metal nanowires into the film-forming solution to obtain a film solution;

[0038] Step S40, coating the film liquid on the surface of the substrate, annealing and drying to obtain the metal na...

Embodiment 1

[0064] In this embodiment, the metal nanowire film is prepared by the following steps:

[0065] (1) Preparation of porous anodized aluminum template: first put the aluminum substrate with a purity of 99.99% into ethanol, oscillate for 5 minutes with ultrasonic waves, and then put it in an oven and anneal at a temperature of 300 ° C for 5 hours to remove the aluminum substrate surface. solvent, and then cooled to obtain a clean aluminum substrate; then, put the clean aluminum substrate into an oxalic acid solution with a concentration of 0.1mol / L, and use the aluminum substrate as the anode for anodic oxidation to obtain a porous anode Alumina formwork.

[0066] (2) Preparation of metal nanowires: the porous anodized alumina template is used as the cathode, and the platinum electrode is used as the anode, and electrochemical deposition is performed in an electrochemical deposition solution to obtain an alumina template deposited with metal nanowires. During electrochemical depo...

Embodiment 2

[0069] In this embodiment, the metal nanowire film is prepared by the following steps:

[0070] (1) Preparation of porous anodized aluminum template: first put the aluminum substrate with a purity of 99.99% into ethanol, ultrasonically vibrate for 8 minutes, and then put it in an oven and anneal at a temperature of 500 ° C for 3 hours to remove the aluminum substrate surface. solvent, and then cooled to obtain a clean aluminum substrate; then, put the clean aluminum substrate in a sulfuric acid solution with a concentration of 0.5mol / L, and use the aluminum substrate as the anode for anodic oxidation to obtain a porous anode Alumina formwork.

[0071] (2) Preparation of metal nanowires: the porous anodized alumina template is used as the cathode, and the platinum electrode is used as the anode, and electrochemical deposition is performed in an electrochemical deposition solution to obtain an alumina template deposited with metal nanowires. During electrochemical deposition Co...

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Abstract

The invention discloses a metal nanowire thin film, a preparation method thereof and a thin film transistor array. Wherein, the preparation method of the metal nanowire film comprises the following steps: using an aluminum substrate as a base material, preparing a porous anodized aluminum template by anodic oxidation; using the porous anodized aluminum template as a cathode, and an inert electrode as an anode, Perform electrochemical deposition in an electrochemical deposition solution containing metal ions to obtain an alumina template deposited with metal nanowires, and use a template remover to remove the alumina template to obtain metal nanowires; use water and alcohol solutions to deposit the metal nanowires rinsing the wires, and dispersing the rinsed metal nanowires into a film-forming solution to obtain a film solution; coating the film solution on the surface of the substrate, annealing and drying to obtain a metal nanowire film. The technical scheme of the invention can reduce the haze of the metal nanowire film.

Description

technical field [0001] The invention relates to the technical field of nanowire preparation, in particular to a metal nanowire thin film, a preparation method thereof and a thin film transistor array. Background technique [0002] Metal nanowire is a kind of nanoscale wire, which is a one-dimensional structure that is limited to less than 100 nanometers in the lateral direction and has no limitation in the vertical direction. The quantum mechanical effect is very important on this scale, so it is also called "quantum Wire". Among them, silver nanowires and copper nanowires not only have excellent electrical conductivity, but also have excellent light transmission and flex resistance due to the nanoscale size effect, so they are considered to be the most likely substitutes for traditional indium tin oxide (Indium Tin Oxide) Tin Oxide (ITO) transparent electrode materials provide the possibility for the realization of flexible, bendable LED displays, touch screens and other e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/288H01L27/12B82Y30/00
CPCH01L21/2885H01L27/1214H01L27/124B82Y30/00
Inventor 夏玉明卓恩宗
Owner BEIHAI HKC OPTOELECTRONICS TECH CO LTD