Method for preparing double-layer transparent conductive oxide film of HJT battery

Abstract

The invention discloses a method for preparing a double-layer transparent conductive oxide film of an HJT battery. The method comprises steps that a first transparent conductive oxide film layer is respectively deposited on an N-type doped amorphous silicon layer of an N-type silicon wafer backlight surface and a P-type doped amorphous silicon layer of a light-receiving surface through the magnetron sputtering technology under the pressure of 0.8-2 Pa; a second transparent conductive oxide film layer is respectively deposited on the first transparent conductive oxide film layers on the N-typesilicon wafer backlight surface and the light-receiving surface through the magnetron sputtering technology under the pressure of 0.1-0.8 Pa, and preparation of the double-layer transparent conductiveoxide film for the HJT battery is completed. The method is advantaged in that properties of low cost and high deposition rate are achieved, not only can the high-quality transparent conductive oxidefilm be prepared, but also substrate damage can be reduced, which is of great significance for improving conversion efficiency and an application range of a heterojunction battery.

Description

technical field [0001] The invention belongs to the field of solar cells, and relates to a preparation method of a double-layer transparent conductive oxide film for an HJT cell. Background technique [0002] Heterojunction cell, also known as HJT cell (Hetero-junction with Intrinsic Thin-layer), is a hybrid solar cell made of crystalline silicon substrate and amorphous silicon film, characterized by low preparation process temperature, high conversion efficiency, Good high temperature characteristics. Transparent conductive oxide (TCO) thin films are developing rapidly due to their two characteristics of transparency and conductivity. Photoelectric properties, has been widely used in heterojunction cells. [0003] At present, the preparation of TCO film adopts magnetron sputtering method, and magnetron sputtering method is widely used in the existing production process to prepare TCO film (such as ITO film) under low pressure state (0.1-0.8Pa). , the high-energy negative...

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Problems solved by technology

[0003] At present, the preparation of TCO film adopts magnetron sputtering method, and magnetron sputtering method is widely used in the existing production process to prepare TCO film (such as ITO film) under low pressure state (0.1-0.8Pa). , the high-energy negative ions generated during the sputtering process (such as oxygen negative ions O - , O 2- ) with high energy will bombard the substrate surface film, causing damage to the substrate surface film, making the local characteristics of the substrate surface film deteriorate, which will not only affect the quality of the TCO film, but also further affect the performance of the solar cell , resulting in a decline in battery performance, such as the increase in interface defects of the bombarded substrate film, the damage of the PN junction caused by the bombardment, and the leakage of local areas, etc.

In addition, when the TCO film is prepared under high pressure by magnetron sputtering, although the damage to the substrate film is small, it will inevitably reduce the deposition rate and performance of the TCO film and increase the preparation cost of the TCO film.

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